component
KY4953C
Public Made by Adomby adom
KY MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KY4953C
KY · MOSFETs · SOP-8
KY4953C from KY, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET (channel 1), which is rated for a -30 V drain-source voltage and -3.8 A continuous drain current. |
| 2 | G1 | input | Gate terminal of the first P-channel MOSFET (channel 1), with gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET (channel 2), which is rated for a -30 V drain-source voltage and -3.8 A continuous drain current. |
| 4 | G2 | input | Gate terminal of the second P-channel MOSFET (channel 2), with gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET (channel 2); pins 5 and 6 are internally common to the same drain. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET (channel 2); pin 6 is the second bond of the same drain as pin 5. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET (channel 1); pins 7 and 8 are internally common to the same drain. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET (channel 1); pin 8 is the second bond of the same drain as pin 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KY |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | -30 | V | VGS=0V, ID=-250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | -1 | µA | VDS=-30V, VGS=0V | 2 | ||
| Gate to Source Forward Leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 66 | 87 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 100 | 130 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-Source Voltage | VDSS | -30 | V | 1 | |||
| Continuous Drain Current | ID | -3.8 | A | 1 | |||
| Pulsed Drain Current | IDM | -12 | A | Repetitive rating: pulse width limited by maximum junction temperature (note 1) | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 2 | W | 1 | |||
| Operating Junction and Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
KY4953C - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
ky4953c-etched.step/ky4953c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ky4953c.step/ky4953c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KY datasheet (5 pp, sha256
7faf7cf891ae7835, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KY4953C
**KY** · MOSFETs · SOP-8
KY4953C from KY, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first P-channel MOSFET (channel 1), which is rated for a -30 V drain-source voltage and -3.8 A continuous drain current. |
| 2 | G1 | input | Gate terminal of the first P-channel MOSFET (channel 1), with gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source terminal of the second P-channel MOSFET (channel 2), which is rated for a -30 V drain-source voltage and -3.8 A continuous drain current. |
| 4 | G2 | input | Gate terminal of the second P-channel MOSFET (channel 2), with gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain terminal of the second P-channel MOSFET (channel 2); pins 5 and 6 are internally common to the same drain. |
| 6 | D2 | passive | Drain terminal of the second P-channel MOSFET (channel 2); pin 6 is the second bond of the same drain as pin 5. |
| 7 | D1 | passive | Drain terminal of the first P-channel MOSFET (channel 1); pins 7 and 8 are internally common to the same drain. |
| 8 | D1 | passive | Drain terminal of the first P-channel MOSFET (channel 1); pin 8 is the second bond of the same drain as pin 7. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KY |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | -30 | | | V | VGS=0V, ID=-250µA | 2 |
| Drain to Source Leakage Current | IDSS | | | -1 | µA | VDS=-30V, VGS=0V | 2 |
| Gate to Source Forward Leakage | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain-to-Source On-Resistance | RDS(on) | | 66 | 87 | mΩ | VGS=-10V, ID=-3A | 2 |
| Drain-to-Source On-Resistance | RDS(on) | | 100 | 130 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-Source Voltage | VDSS | | | -30 | V | | 1 |
| Continuous Drain Current | ID | | | -3.8 | A | | 1 |
| Pulsed Drain Current | IDM | | | -12 | A | Repetitive rating: pulse width limited by maximum junction temperature (note 1) | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Power Dissipation | PD | | | 2 | W | | 1 |
| Operating Junction and Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 62.5 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `KY4953C`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ky4953c-etched.step` / `ky4953c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ky4953c.step` / `ky4953c.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KY datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590236157163843584) (5 pp, sha256 `7faf7cf891ae7835`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ky4953c-datasheet.pdf)