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KY4953C

Public Made by Adom

by adom

KY MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KY4953C

KY · MOSFETs · SOP-8

KY4953C from KY, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of the first P-channel MOSFET (channel 1), which is rated for a -30 V drain-source voltage and -3.8 A continuous drain current.
2 G1 input Gate terminal of the first P-channel MOSFET (channel 1), with gate-source voltage limited to ±20 V.
3 S2 passive Source terminal of the second P-channel MOSFET (channel 2), which is rated for a -30 V drain-source voltage and -3.8 A continuous drain current.
4 G2 input Gate terminal of the second P-channel MOSFET (channel 2), with gate-source voltage limited to ±20 V.
5 D2 passive Drain terminal of the second P-channel MOSFET (channel 2); pins 5 and 6 are internally common to the same drain.
6 D2 passive Drain terminal of the second P-channel MOSFET (channel 2); pin 6 is the second bond of the same drain as pin 5.
7 D1 passive Drain terminal of the first P-channel MOSFET (channel 1); pins 7 and 8 are internally common to the same drain.
8 D1 passive Drain terminal of the first P-channel MOSFET (channel 1); pin 8 is the second bond of the same drain as pin 7.

Key specifications

Parameter Value
Manufacturer KY
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage VDSS -30 V VGS=0V, ID=-250µA 2
Drain to Source Leakage Current IDSS -1 µA VDS=-30V, VGS=0V 2
Gate to Source Forward Leakage IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-to-Source On-Resistance RDS(on) 66 87 mΩ VGS=-10V, ID=-3A 2
Drain-to-Source On-Resistance RDS(on) 100 130 mΩ VGS=-4.5V, ID=-2A 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2 V VDS=VGS, ID=-250µA 2
Drain-Source Voltage VDSS -30 V 1
Continuous Drain Current ID -3.8 A 1
Pulsed Drain Current IDM -12 A Repetitive rating: pulse width limited by maximum junction temperature (note 1) 1
Gate-Source Voltage VGSS -20 20 V 1
Power Dissipation PD 2 W 1
Operating Junction and Storage Temperature Range Tstg -55 150 ℃ 1
Junction Temperature TJ 150 ℃ 1
Junction-to-Ambient Thermal Resistance RθJA 62.5 ℃/W 1

CAD (KiCad official)

  • Symbol: KY4953C
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ky4953c-etched.step / ky4953c-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ky4953c.step / ky4953c.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KY datasheet (5 pp, sha256 7faf7cf891ae7835, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF