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Ray ky4435: specified limits as data (metadata.characteristics, 17 rows from the datasheet) 478e21f 16d ago

KY4435

KY · MOSFETs · SOP-8

KY4435 from KY, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the -30 V P-channel MOSFET, rated VDSS -30 V and VGSS ±20 V.
2 S passive Source terminal of the -30 V P-channel MOSFET, rated VDSS -30 V and VGSS ±20 V.
3 S passive Source terminal of the -30 V P-channel MOSFET, rated VDSS -30 V and VGSS ±20 V.
4 G input Gate terminal of the P-channel MOSFET, with gate-source voltage limited to ±20 V.
5 D passive Drain terminal of the P-channel MOSFET, with continuous drain current rated -10 A at Ta=25℃.
6 D passive Drain terminal of the P-channel MOSFET, with continuous drain current rated -10 A at Ta=25℃.
7 D passive Drain terminal of the P-channel MOSFET, with continuous drain current rated -10 A at Ta=25℃.
8 D passive Drain terminal of the P-channel MOSFET, with continuous drain current rated -10 A at Ta=25℃.

Key specifications

Parameter Value
Manufacturer KY
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID -10 A Ta= 25℃ 1
Continuous Drain Current ID -6 A Ta= 100℃ 1
Pulsed Drain Current IDM -40 A note1 1
Power Dissipation PD 0.3 Ta= 25℃ 1
Thermal Resistance, Junction to Ambient RθJA 42 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS =0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.6 -2.8 V VDS= VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 16 23 mΩ VGS =-10V, ID =-9.1A 2
Static Drain-Source on-Resistance RDS(on) 21 34 mΩ VGS =-4.5V, ID =-6.9A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS = 0V, IS = -10A 2
Maximum Continuous Drain to Source Diode Forward Current IS -10 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 2

CAD (KiCad official)

  • Symbol: KY4435
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ky4435-etched.step / ky4435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ky4435.step / ky4435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KY datasheet (5 pp, sha256 ad9462c081b9c627, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF