component
KY4435
Public Made by Adomby adom
KY MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ky4435: specified limits as data (metadata.characteristics, 17 rows from the datasheet)
2 files changed
+236−1
README.md+24@@ -26,6 +26,30 @@ KY4435 from KY, in a SOP-8. Pinout and pin descriptions extracted from the manuf | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | -30 | V | | 1 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |+| Continuous Drain Current | ID | | | -10 | A | Ta= 25℃ | 1 |+| Continuous Drain Current | ID | | | -6 | A | Ta= 100℃ | 1 |+| Pulsed Drain Current | IDM | | | -40 | A | note1 | 1 |+| Power Dissipation | PD | | | 0.3 | | Ta= 25℃ | 1 |+| Thermal Resistance, Junction to Ambient | RθJA | | | 42 | ℃/W | | 1 |+| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | VGS=0V, ID= -250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS = -30V, VGS = 0V | 2 |+| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS =0V, VGS = ±20V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.8 | V | VDS= VGS, ID= -250μA | 2 |+| Static Drain-Source on-Resistance | RDS(on) | | 16 | 23 | mΩ | VGS =-10V, ID =-9.1A | 2 |+| Static Drain-Source on-Resistance | RDS(on) | | 21 | 34 | mΩ | VGS =-4.5V, ID =-6.9A | 2 |+| Drain to Source Diode Forward Voltage | VSD | | -0.8 | -1.2 | V | VGS = 0V, IS = -10A | 2 |+| Maximum Continuous Drain to Source Diode Forward Current | IS | | | -10 | A | | 2 |+| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | -40 | A | | 2 |+ ## CAD (KiCad official) - Symbol: `KY4435`
page.json+212−1@@ -177,6 +177,217 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "ad9462c081b9c627",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "Ta= 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6,+ "conditions": "Ta= 100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "note1",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "",+ "min": null,+ "typ": null,+ "max": 0.3,+ "conditions": "Ta= 25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 42,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID= -250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = -30V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS =0V, VGS = ±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.6,+ "max": -2.8,+ "conditions": "VDS= VGS, ID= -250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source on-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 16,+ "max": 23,+ "conditions": "VGS =-10V, ID =-9.1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source on-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 21,+ "max": 34,+ "conditions": "VGS =-4.5V, ID =-6.9A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.2,+ "conditions": "VGS = 0V, IS = -10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain to Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Pulsed Drain to Source Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -40,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -218,4 +429,4 @@ "visibility": { "public": true }-}+}