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KTC3875GR

Public Made by Adom

by adom

Changjing Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KTC3875GR

Changjing · Digital Transistors · SOT-23

KTC3875GR from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the NPN transistor, driven relative to the emitter; the datasheet gives no separate pin-specific limit, so it is bounded by the maximum ratings (VEBO 5 V, IC 150 mA, Tj/Tstg -55 to +150 ℃).
2 EMITTER passive Emitter terminal of the NPN transistor; the emitter-base voltage is limited to 5 V (VEBO) and the emitter-base breakdown V(BR)EBO is 5 V at IE=100μA.
3 COLLECTOR passive Collector terminal of the NPN transistor; limited to VCBO 60 V, VCEO 50 V, and collector current IC 150 mA, with collector power dissipation PC 150 mW.

Key specifications

Parameter Value
Manufacturer Changjing
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC current gain (rank GR) hFE 200 400 VCE= 6V, IC= 2mA 1
Collector-base breakdown voltage V(BR)CBO 60 V IC=100μA,IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 50 V IC= 1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 5 V IE= 100μA, IC=0 1
Collector cut-off current ICBO 0.1 μA VCB= 60V, IE=0 1
Emitter cut-off current IEBO 0.1 μA VEB= 5V, IC=0 1
Collector-emitter saturation voltage VCE(sat) 0.1 0.25 V IC=100mA, IB= 10mA 1
Base-emitter saturation voltage VBE(sat) 1 V IC=100mA, IB= 10mA 1
Transition frequency fT 80 MHz VCE=10V, IC= 1mA 1
Collector output capacitance Cob 2 3.5 pF VCB=10V,IE=0,f=1MHZ 1
Noise figure NF 1 10 dB VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ 1
Collector-Base Voltage VCBO 60 V Ta=25℃ unless otherwise noted 1
Collector-Emitter Voltage VCEO 50 V Ta=25℃ unless otherwise noted 1
Emitter-Base Voltage VEBO 5 V Ta=25℃ unless otherwise noted 1
Collector Current IC 150 mA Ta=25℃ unless otherwise noted 1
Collector Power Dissipation PC 150 mW Ta=25℃ unless otherwise noted 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1
Thermal Resistance From Junction To Ambient RΘJA 833 ℃/W 1

CAD (KiCad official)

  • Symbol: KTC3875GR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ktc3875gr-etched.step / ktc3875gr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ktc3875gr.step / ktc3875gr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 ec58228629e59969, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF