component
KTC3875GR
Public Made by Adomby adom
Changjing Digital Transistors, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKTC3875GR
Changjing · Digital Transistors · SOT-23
KTC3875GR from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, driven relative to the emitter; the datasheet gives no separate pin-specific limit, so it is bounded by the maximum ratings (VEBO 5 V, IC 150 mA, Tj/Tstg -55 to +150 ℃). |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the emitter-base voltage is limited to 5 V (VEBO) and the emitter-base breakdown V(BR)EBO is 5 V at IE=100μA. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; limited to VCBO 60 V, VCEO 50 V, and collector current IC 150 mA, with collector power dissipation PC 150 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain (rank GR) | hFE | 200 | 400 | VCE= 6V, IC= 2mA | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC= 1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE= 100μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB= 60V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB= 5V, IC=0 | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.1 | 0.25 | V | IC=100mA, IB= 10mA | 1 | |
| Base-emitter saturation voltage | VBE(sat) | 1 | V | IC=100mA, IB= 10mA | 1 | ||
| Transition frequency | fT | 80 | MHz | VCE=10V, IC= 1mA | 1 | ||
| Collector output capacitance | Cob | 2 | 3.5 | pF | VCB=10V,IE=0,f=1MHZ | 1 | |
| Noise figure | NF | 1 | 10 | dB | VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ | 1 | |
| Collector-Base Voltage | VCBO | 60 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector-Emitter Voltage | VCEO | 50 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector Current | IC | 150 | mA | Ta=25℃ unless otherwise noted | 1 | ||
| Collector Power Dissipation | PC | 150 | mW | Ta=25℃ unless otherwise noted | 1 | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance From Junction To Ambient | RΘJA | 833 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
KTC3875GR - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ktc3875gr-etched.step/ktc3875gr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ktc3875gr.step/ktc3875gr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
ec58228629e59969, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).