component

KST10MTF

Public Made by Adom

by adom

onsemi Bipolar Transistors - BJT, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KST10MTF

onsemi · Bipolar Transistors - BJT · SOT-23-3

KST10MTF from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; the datasheet gives VEBO of 3 V as the emitter-base voltage rating and no separate base pin limit.
2 Emitter passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage BVEBO is 3 V minimum at IE = 10 µA.
3 Collector passive Collector terminal of the NPN transistor; the absolute maximum collector-base voltage VCBO is 30 V and collector-emitter voltage VCEO is 25 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 30 V 2
Collector-Emitter Voltage VCEO 25 V 2
Emitter-Base Voltage VEBO 3 V 2
Storage Temperature TSTG 150 °C 2
Power Dissipation PD 350 mW 2
Derate Above 25°C PD 2.8 mW/°C Derate above 25°C 2
Thermal Resistance, Junction-to-Ambient RθJA 357 °C/W PCB FR-4, 76 mm x 114 mm x 1.57 mm, minimum land pattern 2
Collector-Base Breakdown Voltage BVCBO 30 V IC = 100 μA, IE = 0 3
Collector-Emitter Breakdown Voltage BVCEO 25 V IC = 1 mA, IB = 0 3
Emitter-Base Breakdown Voltage BVEBO 3 V IE = 10 μA, IC = 0 3
Collector Cut-Off Current ICBO 100 nA VCB = 25 V, IE = 0 3
Emitter Cut-Off Current IEBO 100 nA VEB = 2 V, IC = 0 3
DC Current Gain hFE 60 VCE = 10 V, IC = 4 mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC = 4 mA, IB = 0.4 mA 3
Base-Emitter On Voltage VBE(on) 0.95 V VCE = 10 V, IC = 4 mA 3
Current Gain Bandwidth Product fT 650 MHz VCE = 10 V, IC = 4 mA, f = 100 MHz 3
Output Capacitance Cob 0.7 pF VCB = 10 V, IE = 0, f = 1 MHz 3
Common-Base Feedback Capacitance Crb 0.65 pF VCB = 10 V, IE = 0, f = 1 MHz 3
Collector-Base Time Constant Cc·rbb´ 9 pF VCB = 10 V, IC = 4 mA, f = 31.8 MHz 3

CAD (KiCad official)

  • Symbol: KST10MTF
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: kst10mtf-etched.step / kst10mtf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kst10mtf.step / kst10mtf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 e5563a4376232634, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF