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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	10d ago
viewers	kst10mtf: viewers · Ray	10d ago
kst10mtf-etched.glb	Publish 0.1.0 · Ray	10d ago
kst10mtf-etched.step	kst10mtf: factory component page (tier=mfr) · Ray	10d ago
kst10mtf-hero.glb	kst10mtf: hero GLB from the etched model (keeps the MPN mark) · Ray	10d ago
kst10mtf-hero.overlay.json	Publish 0.1.0 · Ray	10d ago
kst10mtf.glb	Publish 0.1.0 · Ray	10d ago
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kst10mtf.kicad_sym	Publish 0.1.0 · Ray	10d ago
kst10mtf.lbr	Publish 0.1.0 · Ray	10d ago
kst10mtf.step	Publish 0.1.0 · Ray	10d ago
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KST10MTF

onsemi · Bipolar Transistors - BJT · SOT-23-3

KST10MTF from onsemi, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Base	input	Base terminal of the NPN transistor; the datasheet gives VEBO of 3 V as the emitter-base voltage rating and no separate base pin limit.
2	Emitter	passive	Emitter terminal of the NPN transistor; the emitter-base breakdown voltage BVEBO is 3 V minimum at IE = 10 µA.
3	Collector	passive	Collector terminal of the NPN transistor; the absolute maximum collector-base voltage VCBO is 30 V and collector-emitter voltage VCEO is 25 V.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-23-3
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-Base Voltage	VCBO			30	V		2
Collector-Emitter Voltage	VCEO			25	V		2
Emitter-Base Voltage	VEBO			3	V		2
Storage Temperature	TSTG			150	°C		2
Power Dissipation	PD			350	mW		2
Derate Above 25°C	PD		2.8		mW/°C	Derate above 25°C	2
Thermal Resistance, Junction-to-Ambient	RθJA		357		°C/W	PCB FR-4, 76 mm x 114 mm x 1.57 mm, minimum land pattern	2
Collector-Base Breakdown Voltage	BVCBO	30			V	IC = 100 μA, IE = 0	3
Collector-Emitter Breakdown Voltage	BVCEO	25			V	IC = 1 mA, IB = 0	3
Emitter-Base Breakdown Voltage	BVEBO	3			V	IE = 10 μA, IC = 0	3
Collector Cut-Off Current	ICBO			100	nA	VCB = 25 V, IE = 0	3
Emitter Cut-Off Current	IEBO			100	nA	VEB = 2 V, IC = 0	3
DC Current Gain	hFE	60				VCE = 10 V, IC = 4 mA	3
Collector-Emitter Saturation Voltage	VCE(sat)			0.5	V	IC = 4 mA, IB = 0.4 mA	3
Base-Emitter On Voltage	VBE(on)			0.95	V	VCE = 10 V, IC = 4 mA	3
Current Gain Bandwidth Product	fT	650			MHz	VCE = 10 V, IC = 4 mA, f = 100 MHz	3
Output Capacitance	Cob			0.7	pF	VCB = 10 V, IE = 0, f = 1 MHz	3
Common-Base Feedback Capacitance	Crb			0.65	pF	VCB = 10 V, IE = 0, f = 1 MHz	3
Collector-Base Time Constant	Cc·rbb´			9	pF	VCB = 10 V, IC = 4 mA, f = 31.8 MHz	3

CAD (KiCad official)

Symbol: KST10MTF
Footprint: Package_TO_SOT_SMD:SOT-23-3
3D model: SOT-23-3 (KiCad packages3D, STEP)
3D model files: kst10mtf-etched.step / kst10mtf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kst10mtf.step / kst10mtf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (5 pp, sha256 e5563a4376232634, retrieved 2026-10-28, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF