# KSD1616AGTA

**onsemi** · Bipolar (BJT) · TO-92-3

KSD1616AGTA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the NPN transistor; the datasheet rates the emitter-base voltage at 6 V (VEBO) maximum. |
| 2 | Collector | passive | Collector terminal of the NPN transistor; the datasheet rates the collector-base voltage at 120 V (VCBO) and collector current at 1 A DC (2 A pulsed). |
| 3 | Base | input | Base terminal of the NPN transistor used to drive the device; the datasheet specifies a VCE(sat) of 0.30 V max at IC = 1 A, IB = 50 mA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-92-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 120 |  |  | V | IC = 100 μA, IE = 0 | 3 |
| Collector-Emitter Breakdown Voltage | BVCEO | 60 |  |  | V | IC = 1 mA, IB = 0 | 3 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 |  |  | V | IE = 100 μA, IC = 0 | 3 |
| Collector Cut-Off Current | ICBO |  |  | 100 | nA | VCB = 60 V, IE = 0 | 3 |
| Emitter Cut-Off Current | IEBO |  |  | 100 | nA | VEB = 6 V, IC = 0 | 3 |
| DC Current Gain | hFE1 | 135 |  | 400 |  | VCE = 2 V, IC = 100 mA | 3 |
| DC Current Gain | hFE2 | 81 |  |  |  | VCE = 2 V, IC = 1 A | 3 |
| Base-Emitter On Voltage | VBE(on) | 600 | 640 | 700 | mV | VCE = 2 V, IC = 50 mA | 3 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | 0.15 | 0.3 | V | IC = 1 A, IB = 50 mA | 3 |
| Base-Emitter Saturation Voltage | VBE(sat) |  | 0.9 | 1.2 | V | IC = 1 A, IB = 50 mA | 3 |
| Current Gain Bandwidth Product | fT | 100 | 160 |  | MHz | VCE = 2 V, IC = 100 mA | 3 |
| Collector-Base Voltage | VCBO |  |  | 120 | V |  | 2 |
| Collector-Emitter Voltage | VCEO |  |  | 60 | V |  | 2 |
| Emitter-Base Voltage | VEBO |  |  | 6 | V |  | 2 |
| Collector Current (DC) | IC |  |  | 1 | A |  | 2 |
| Collector Current (Pulse) | ICP |  |  | 2 | A | Pulse width ≤ 10 ms, duty cycle < 50% | 2 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 2 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 2 |
| Total Device Dissipation | PD |  |  | 0.75 | W |  | 3 |
| Derate Above 25°C |  |  |  | 6 | mW/°C | Derate above 25°C | 3 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 160 | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `KSD1616AGTA`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files: `ksd1616agta-etched.step` / `ksd1616agta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ksd1616agta.step` / `ksd1616agta.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588930021256286208) (9 pp, sha256 `491b6dc1b2451e9c`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ksd1616agta-datasheet.pdf)