component

KSD1616AGTA

Public Made by Adom

by adom

onsemi Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KSD1616AGTA

onsemi · Bipolar (BJT) · TO-92-3

KSD1616AGTA from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; the datasheet rates the emitter-base voltage at 6 V (VEBO) maximum.
2 Collector passive Collector terminal of the NPN transistor; the datasheet rates the collector-base voltage at 120 V (VCBO) and collector current at 1 A DC (2 A pulsed).
3 Base input Base terminal of the NPN transistor used to drive the device; the datasheet specifies a VCE(sat) of 0.30 V max at IC = 1 A, IB = 50 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 120 V IC = 100 μA, IE = 0 3
Collector-Emitter Breakdown Voltage BVCEO 60 V IC = 1 mA, IB = 0 3
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 100 μA, IC = 0 3
Collector Cut-Off Current ICBO 100 nA VCB = 60 V, IE = 0 3
Emitter Cut-Off Current IEBO 100 nA VEB = 6 V, IC = 0 3
DC Current Gain hFE1 135 400 VCE = 2 V, IC = 100 mA 3
DC Current Gain hFE2 81 VCE = 2 V, IC = 1 A 3
Base-Emitter On Voltage VBE(on) 600 640 700 mV VCE = 2 V, IC = 50 mA 3
Collector-Emitter Saturation Voltage VCE(sat) 0.15 0.3 V IC = 1 A, IB = 50 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.9 1.2 V IC = 1 A, IB = 50 mA 3
Current Gain Bandwidth Product fT 100 160 MHz VCE = 2 V, IC = 100 mA 3
Collector-Base Voltage VCBO 120 V 2
Collector-Emitter Voltage VCEO 60 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current (DC) IC 1 A 2
Collector Current (Pulse) ICP 2 A Pulse width ≤ 10 ms, duty cycle < 50% 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Total Device Dissipation PD 0.75 W 3
Derate Above 25°C 6 mW/°C Derate above 25°C 3
Thermal Resistance, Junction-to-Ambient RθJA 160 °C/W 3

CAD (KiCad official)

  • Symbol: KSD1616AGTA
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: ksd1616agta-etched.step / ksd1616agta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ksd1616agta.step / ksd1616agta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (9 pp, sha256 491b6dc1b2451e9c, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF