component

KSC1008YBU

Public Made by Adom

by adom

onsemi Bipolar (BJT), TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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KSC1008YBU

onsemi · Bipolar (BJT) · TO-92-3

KSC1008YBU from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Emitter passive Emitter terminal of the NPN transistor; the emitter-base breakdown voltage BVEBO is 8 V minimum at IE = 10 µA.
2 Base input Base terminal of the NPN transistor; VBE(sat) is 0.86 V typical and 1.10 V maximum at IC = 500 mA, IB = 50 mA.
3 Collector passive Collector terminal of the NPN transistor; VCBO is 80 V and VCEO is 60 V maximum, with collector current IC rated at 700 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package TO-92-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 80 V IC = 100 A, IE = 0 3
Collector-Emitter Breakdown Voltage BVCEO 60 V IC = 10 mA, IB = 0 3
Emitter-Base Breakdown Voltage BVEBO 8 V IE = 10 A, IC = 0 3
Collector Cut-Off Current ICBO 0.1 A VCB = 60 V, IE = 0 3
Emitter Cut-Off Current IEBO 0.1 A VEB = 5 V, IC = 0 3
DC Current Gain (all hFE classes) hFE 40 400 VCE = 2 V, IC = 50 mA 3
DC Current Gain (Y classification, per part number KSC1008YBU) hFE 120 240 3
Collector-Emitter Saturation Voltage VCE(sat) 0.2 0.4 V IC = 500 mA, IB = 50 mA 3
Base-Emitter Saturation Voltage VBE(sat) 0.86 1.1 V IC = 500 mA, IB = 50 mA 3
Current Gain Bandwidth Product fT 30 50 MHz VCE = 10 V, IC = 50 mA 3
Collector-Base Voltage VCBO 80 V TA = 25°C 2
Collector-Emitter Voltage VCEO 60 V TA = 25°C 2
Emitter-Base Voltage VEBO 8 V TA = 25°C 2
Collector Current IC 700 mA TA = 25°C 2
Junction Temperature TJ 150 C TA = 25°C 2
Storage Temperature TSTG -55 150 C 2
Power Dissipation PD 800 mW TA = 25°C, PCB FR-4 76 mm x 114 mm x 1.57 mm with minimum land pattern (Note 1) 2
Power Dissipation Derating Above 25 C Derate 6.4 mW/C Above 25C, TA = 25°C, PCB FR-4 (Note 1) 2
Thermal Resistance, Junction-to-Ambient RθJA 156 C/W PCB FR-4 with minimum land pattern (Note 1) 2

CAD (KiCad official)

  • Symbol: KSC1008YBU
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92-3 (KiCad packages3D, STEP)
  • 3D model files: ksc1008ybu-etched.step / ksc1008ybu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ksc1008ybu.step / ksc1008ybu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (7 pp, sha256 12925857205215a3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF