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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

KSC1008YBU

onsemi · Bipolar (BJT) · TO-92-3

KSC1008YBU from onsemi, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Emitter	passive	Emitter terminal of the NPN transistor; the emitter-base breakdown voltage BVEBO is 8 V minimum at IE = 10 µA.
2	Base	input	Base terminal of the NPN transistor; VBE(sat) is 0.86 V typical and 1.10 V maximum at IC = 500 mA, IB = 50 mA.
3	Collector	passive	Collector terminal of the NPN transistor; VCBO is 80 V and VCEO is 60 V maximum, with collector current IC rated at 700 mA.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	TO-92-3
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-Base Breakdown Voltage	BVCBO	80			V	IC = 100 A, IE = 0	3
Collector-Emitter Breakdown Voltage	BVCEO	60			V	IC = 10 mA, IB = 0	3
Emitter-Base Breakdown Voltage	BVEBO	8			V	IE = 10 A, IC = 0	3
Collector Cut-Off Current	ICBO			0.1	A	VCB = 60 V, IE = 0	3
Emitter Cut-Off Current	IEBO			0.1	A	VEB = 5 V, IC = 0	3
DC Current Gain (all hFE classes)	hFE	40		400		VCE = 2 V, IC = 50 mA	3
DC Current Gain (Y classification, per part number KSC1008YBU)	hFE	120		240			3
Collector-Emitter Saturation Voltage	VCE(sat)		0.2	0.4	V	IC = 500 mA, IB = 50 mA	3
Base-Emitter Saturation Voltage	VBE(sat)		0.86	1.1	V	IC = 500 mA, IB = 50 mA	3
Current Gain Bandwidth Product	fT	30	50		MHz	VCE = 10 V, IC = 50 mA	3
Collector-Base Voltage	VCBO			80	V	TA = 25°C	2
Collector-Emitter Voltage	VCEO			60	V	TA = 25°C	2
Emitter-Base Voltage	VEBO			8	V	TA = 25°C	2
Collector Current	IC			700	mA	TA = 25°C	2
Junction Temperature	TJ			150	C	TA = 25°C	2
Storage Temperature	TSTG	-55		150	C		2
Power Dissipation	PD			800	mW	TA = 25°C, PCB FR-4 76 mm x 114 mm x 1.57 mm with minimum land pattern (Note 1)	2
Power Dissipation Derating Above 25 C	Derate		6.4		mW/C	Above 25C, TA = 25°C, PCB FR-4 (Note 1)	2
Thermal Resistance, Junction-to-Ambient	RθJA		156		C/W	PCB FR-4 with minimum land pattern (Note 1)	2

CAD (KiCad official)

Symbol: KSC1008YBU
Footprint: Package_TO_SOT_THT:TO-92_Inline
3D model: TO-92-3 (KiCad packages3D, STEP)
3D model files: ksc1008ybu-etched.step / ksc1008ybu-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ksc1008ybu.step / ksc1008ybu.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (7 pp, sha256 12925857205215a3, retrieved 2026-10-17, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF