# KSB1151

**Changjing** · Bipolar Transistors - BJT · TO-126-3

KSB1151 from Changjing, in a TO-126-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the PNP transistor, with emitter-base voltage rated VEBO -7 V and emitter-base breakdown V(BR)EBO of -7 V at IE=-100µA. |
| 2 | COLLECTOR | passive | Collector terminal, with collector current rated IC -5 A, collector-base voltage VCBO -60 V and collector-emitter voltage VCEO -60 V. |
| 3 | BASE | passive | Base terminal, which drives the device with a base-emitter saturation voltage VBE(sat) of -1.2 V at IC=-2A and IB=-0.2A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-126-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -60 |  |  | V | IC=-100µA,IE=0 | 2 |
| Collector-emitter breakdown voltage | V(BR)CEO | -60 |  |  | V | IC=-1mA,IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | -7 |  |  | V | IE=-100µA,IC=0 | 2 |
| Collector cut-off current | ICBO |  |  | -10 | μA | VCB=-50V,IE=0 | 2 |
| Emitter cut-off current | IEBO |  |  | -10 | μA | VEB=-7V,IC=0 | 2 |
| DC current gain | hFE(1) | 100 |  | 400 |  | VCE=-1V, IC=-2A | 2 |
| DC current gain | hFE(2) | 60 |  |  |  | VCE=-1V, IC=-0.1A | 2 |
| DC current gain | hFE(3) | 50 |  |  |  | VCE=-2V, IC=-5A | 2 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | -0.3 | V | IC=-2A,IB=-0.2A | 2 |
| Base-emitter saturation voltage | VBE(sat) |  |  | -1.2 | V | IC=-2A,IB=-0.2A | 2 |
| Collector-base voltage | VCBO |  |  | -60 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | -60 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | -7 | V |  | 1 |
| Collector current | IC |  |  | -5 | A |  | 1 |
| Collector power dissipation | PC |  |  | 1.25 | W |  | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance from junction to ambient | RθJA |  |  | 100 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `KSB1151`
- Footprint: `Package_TO_SOT_THT:TO-126-3_Vertical`
- 3D model: TO-126-3 (KiCad packages3D, STEP)
- 3D model files: `ksb1151-etched.step` / `ksb1151-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ksb1151.step` / `ksb1151.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](docs/ksb1151-datasheet.pdf) (4 pp, sha256 `1f56c4449a911d0c`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ksb1151-datasheet.pdf)