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KSB1151

Public Made by Adom

by adom

Changjing Bipolar Transistors - BJT, TO-126-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KSB1151

Changjing · Bipolar Transistors - BJT · TO-126-3

KSB1151 from Changjing, in a TO-126-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter terminal of the PNP transistor, with emitter-base voltage rated VEBO -7 V and emitter-base breakdown V(BR)EBO of -7 V at IE=-100µA.
2 COLLECTOR passive Collector terminal, with collector current rated IC -5 A, collector-base voltage VCBO -60 V and collector-emitter voltage VCEO -60 V.
3 BASE passive Base terminal, which drives the device with a base-emitter saturation voltage VBE(sat) of -1.2 V at IC=-2A and IB=-0.2A.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-126-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -60 V IC=-100µA,IE=0 2
Collector-emitter breakdown voltage V(BR)CEO -60 V IC=-1mA,IB=0 2
Emitter-base breakdown voltage V(BR)EBO -7 V IE=-100µA,IC=0 2
Collector cut-off current ICBO -10 μA VCB=-50V,IE=0 2
Emitter cut-off current IEBO -10 μA VEB=-7V,IC=0 2
DC current gain hFE(1) 100 400 VCE=-1V, IC=-2A 2
DC current gain hFE(2) 60 VCE=-1V, IC=-0.1A 2
DC current gain hFE(3) 50 VCE=-2V, IC=-5A 2
Collector-emitter saturation voltage VCE(sat) -0.3 V IC=-2A,IB=-0.2A 2
Base-emitter saturation voltage VBE(sat) -1.2 V IC=-2A,IB=-0.2A 2
Collector-base voltage VCBO -60 V 1
Collector-emitter voltage VCEO -60 V 1
Emitter-base voltage VEBO -7 V 1
Collector current IC -5 A 1
Collector power dissipation PC 1.25 W 1
Operation junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance from junction to ambient RθJA 100 ℃/W 1

CAD (KiCad official)

  • Symbol: KSB1151
  • Footprint: Package_TO_SOT_THT:TO-126-3_Vertical
  • 3D model: TO-126-3 (KiCad packages3D, STEP)
  • 3D model files: ksb1151-etched.step / ksb1151-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ksb1151.step / ksb1151.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 1f56c4449a911d0c, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF