component
KNY6610A
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KIA Semicon Tech MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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KNY6610A
KIA Semicon Tech · MOSFETs · DFN-8(5x6)
KNY6610A from KIA Semicon Tech, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A. |
| 4 | Gate | input | Gate control input; gate-source voltage VGS is limited to ±20 V. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V. |
| 7 | Drain | passive | Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V. |
| 8 | Drain | passive | Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0V,ID=250uA | 3 | ||
| Drain-source leakage current | IDSS | 1 | uA | VDS=100V, VGS=0V | 3 | ||
| Gate-source forward leakage | IGSS | -1 | 1 | uA | VGS=+20V, VDS=0V | 3 | |
| Gate threshold voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS= VGS,ID=250uA | 3 |
| Drain-source on-resistance | RDS(on) | 83 | 110 | mΩ | VGS=10V,ID=10A | 3 | |
| Drain-source on-resistance | RDS(on) | 90 | 130 | mΩ | VGS=4.5V,ID=8A | 3 | |
| Maximum continuous drain-source diode forward current | IS | 15 | A | 3 | |||
| Maximum pulsed drain-source diode forward current | ISM | 60 | A | 3 | |||
| Diode forward voltage | VSD | 1.2 | V | ISD=15A,VGS=0V, TJ=25°C | 3 | ||
| Drain-source voltage | VDSS | 100 | V | 2 | |||
| Continuous drain current | ID | 15 | A | TC=25°C | 2 | ||
| Continuous drain current | ID | 10 | A | TC=100°C | 2 | ||
| Pulsed drain current | IDM | 60 | A | 2 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 2 | ||
| Single pulse avalanche energy | EAS | 3.5 | mJ | 2 | |||
| Power dissipation | PD | 55 | W | TC=25°C | 2 | ||
| Operating junction and storage temperature range | TJ,TSTG | -55 | 150 | ºC | 2 | ||
| Maximum lead temperature for soldering purposes | TL | 300 | ºC | 1/8" from case for 5 seconds | 2 | ||
| Thermal resistance junction-case | RθJC | 2.73 | ºC/W | 2 |
CAD (KiCad official)
- Symbol:
KNY6610A - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
kny6610a-etched.step/kny6610a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kny6610a.step/kny6610a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (7 pp, sha256
36a91b1d9ed7d728, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# KNY6610A
**KIA Semicon Tech** · MOSFETs · DFN-8(5x6)
KNY6610A from KIA Semicon Tech, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Source | passive | Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A. |
| 2 | Source | passive | Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A. |
| 4 | Gate | input | Gate control input; gate-source voltage VGS is limited to ±20 V. |
| 5 | Drain | passive | Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V. |
| 6 | Drain | passive | Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V. |
| 7 | Drain | passive | Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V. |
| 8 | Drain | passive | Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 100 | | | V | VGS=0V,ID=250uA | 3 |
| Drain-source leakage current | IDSS | | | 1 | uA | VDS=100V, VGS=0V | 3 |
| Gate-source forward leakage | IGSS | -1 | | 1 | uA | VGS=+20V, VDS=0V | 3 |
| Gate threshold voltage | VGS(TH) | 1 | 1.7 | 2.5 | V | VDS= VGS,ID=250uA | 3 |
| Drain-source on-resistance | RDS(on) | | 83 | 110 | mΩ | VGS=10V,ID=10A | 3 |
| Drain-source on-resistance | RDS(on) | | 90 | 130 | mΩ | VGS=4.5V,ID=8A | 3 |
| Maximum continuous drain-source diode forward current | IS | | | 15 | A | | 3 |
| Maximum pulsed drain-source diode forward current | ISM | | | 60 | A | | 3 |
| Diode forward voltage | VSD | | | 1.2 | V | ISD=15A,VGS=0V, TJ=25°C | 3 |
| Drain-source voltage | VDSS | | | 100 | V | | 2 |
| Continuous drain current | ID | | | 15 | A | TC=25°C | 2 |
| Continuous drain current | ID | | | 10 | A | TC=100°C | 2 |
| Pulsed drain current | IDM | | | 60 | A | | 2 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 2 |
| Single pulse avalanche energy | EAS | | | 3.5 | mJ | | 2 |
| Power dissipation | PD | | | 55 | W | TC=25°C | 2 |
| Operating junction and storage temperature range | TJ,TSTG | -55 | | 150 | ºC | | 2 |
| Maximum lead temperature for soldering purposes | TL | | | 300 | ºC | 1/8" from case for 5 seconds | 2 |
| Thermal resistance junction-case | RθJC | | | 2.73 | ºC/W | | 2 |
## CAD (KiCad official)
- Symbol: `KNY6610A`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `kny6610a-etched.step` / `kny6610a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kny6610a.step` / `kny6610a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [KIA Semicon Tech datasheet](docs/kny6610a-datasheet.pdf) (7 pp, sha256 `36a91b1d9ed7d728`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/kny6610a-datasheet.pdf)