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KNY6610A

Public Made by Adom

by adom

KIA Semicon Tech MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KNY6610A

KIA Semicon Tech · MOSFETs · DFN-8(5x6)

KNY6610A from KIA Semicon Tech, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A.
2 Source passive Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A.
3 Source passive Source terminal of the N-channel MOSFET (DFN5*6 pins 1,2,3 are all Source); the diode forward current IS is rated 15 A.
4 Gate input Gate control input; gate-source voltage VGS is limited to ±20 V.
5 Drain passive Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V.
6 Drain passive Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V.
7 Drain passive Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V.
8 Drain passive Drain terminal of the N-channel MOSFET (DFN5*6 pins 5,6,7,8 are all Drain); drain-source voltage VDSS is rated 100 V.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package DFN-8(5x6)
Category Triode/MOS Tube/Transistor
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 100 V VGS=0V,ID=250uA 3
Drain-source leakage current IDSS 1 uA VDS=100V, VGS=0V 3
Gate-source forward leakage IGSS -1 1 uA VGS=+20V, VDS=0V 3
Gate threshold voltage VGS(TH) 1 1.7 2.5 V VDS= VGS,ID=250uA 3
Drain-source on-resistance RDS(on) 83 110 mΩ VGS=10V,ID=10A 3
Drain-source on-resistance RDS(on) 90 130 mΩ VGS=4.5V,ID=8A 3
Maximum continuous drain-source diode forward current IS 15 A 3
Maximum pulsed drain-source diode forward current ISM 60 A 3
Diode forward voltage VSD 1.2 V ISD=15A,VGS=0V, TJ=25°C 3
Drain-source voltage VDSS 100 V 2
Continuous drain current ID 15 A TC=25°C 2
Continuous drain current ID 10 A TC=100°C 2
Pulsed drain current IDM 60 A 2
Gate-source voltage VGS -20 20 V 2
Single pulse avalanche energy EAS 3.5 mJ 2
Power dissipation PD 55 W TC=25°C 2
Operating junction and storage temperature range TJ,TSTG -55 150 ºC 2
Maximum lead temperature for soldering purposes TL 300 ºC 1/8" from case for 5 seconds 2
Thermal resistance junction-case RθJC 2.73 ºC/W 2

CAD (KiCad official)

  • Symbol: KNY6610A
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: kny6610a-etched.step / kny6610a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kny6610a.step / kny6610a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (7 pp, sha256 36a91b1d9ed7d728, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF