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Ray Set visibility: public d6fbd59 23d ago
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  "title": "KNS8104A",
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    "subcategory": "MOSFETs",
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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        "status": "no match"
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      "mouser": {
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    "pins": [
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        "name": "Gate",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; the datasheet gives VGS ±20 V (absolute maximum) and VGS(TH) of 1.0 to 2.5 V at ID = 250 µA."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
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      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
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    "specs": {
      "Manufacturer": "KIA Semicon Tech",
      "Package": "SOT-89",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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      "rows": [
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          "name": "Drain-source breakdown voltage",
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          "kind": "electrical",
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          "typ": null,
          "max": null,
          "conditions": "VGS=0V,ID=250uA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source leakage current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "uA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=40V, VGS=0V",
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        },
        {
          "name": "Gate-source forward leakage",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
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          "max": 100,
          "conditions": "VGS=±20V, VDS=0V",
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        {
          "name": "Gate threshold voltage",
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          "typ": 1.5,
          "max": 2.5,
          "conditions": "VDS= VGS,ID=250uA",
          "source_page": 3,
          "source": "datasheet"
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        {
          "name": "Drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 12,
          "max": 16,
          "conditions": "VGS=10V,ID=20A",
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        {
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          "symbol": "IS",
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        {
          "name": "Maximum Pulsed Drain-Source Diode Forward Current",
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          "kind": "electrical",
          "unit": "A",
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          "max": 120,
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        {
          "name": "Diode forward voltage",
          "symbol": "VSD",
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          "min": null,
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          "max": 1.2,
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        {
          "name": "Drain-source voltage",
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          "unit": "A",
          "min": null,
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          "max": 19,
          "conditions": "TC=100°C",
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          "conditions": "TC=25°C unless otherwise noted",
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          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
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          "typ": null,
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          "conditions": "TJ=25°C, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω (note 2)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation (TC=25°C)",
          "symbol": "PD",
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          "max": 48,
          "conditions": "TC=25°C",
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        {
          "name": "Operating junction and storage temperature range",
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          "unit": "ºC",
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        },
        {
          "name": "Maximum lead temperature for soldering purposes, 1/8\" from case for 5 seconds",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "ºC",
          "min": null,
          "typ": null,
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          "conditions": "1/8\" from case for 5 seconds",
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          "source": "datasheet"
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  "discovery_pitch": "KNS8104A (KIA Semicon Tech) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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