component
KNS8104A
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKNS8104A
KIA Semicon Tech · MOSFETs · SOT-89
KNS8104A from KIA Semicon Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet gives VGS ±20 V (absolute maximum) and VGS(TH) of 1.0 to 2.5 V at ID = 250 µA. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the datasheet gives VDSS of 40 V and continuous ID of 30 A at TC = 25 °C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit beyond the device absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0V,ID=250uA | 3 | ||
| Drain-source leakage current | IDSS | 1 | uA | VDS=40V, VGS=0V | 3 | ||
| Gate-source forward leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate threshold voltage | VGS(TH) | 1 | 1.5 | 2.5 | V | VDS= VGS,ID=250uA | 3 |
| Drain-source on-resistance | RDS(on) | 12 | 16 | mΩ | VGS=10V,ID=20A | 3 | |
| Drain-source on-resistance | RDS(on) | 16.5 | 24 | mΩ | VGS=4.5V,ID=10A | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 30 | A | 3 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 120 | A | 3 | |||
| Diode forward voltage | VSD | 1.2 | V | ISD=20A,VGS=0V,TJ=25°C | 3 | ||
| Drain-source voltage | VDSS | 40 | V | TC=25°C unless otherwise noted | 2 | ||
| Continuous drain current | ID | 30 | A | TC=25°C | 2 | ||
| Continuous drain current | ID | 19 | A | TC=100°C | 2 | ||
| Pulsed drain current | IDM | 120 | A | TC=25°C unless otherwise noted | 2 | ||
| Gate-source voltage | VGS | -20 | 20 | V | TC=25°C unless otherwise noted | 2 | |
| Single pulse avalanche energy | EAS | 25 | mJ | TJ=25°C, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω (note 2) | 2 | ||
| Power dissipation (TC=25°C) | PD | 48 | W | TC=25°C | 2 | ||
| Operating junction and storage temperature range | TJ ,TSTG | -55 | 150 | ºC | 2 | ||
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | ºC | 1/8" from case for 5 seconds | 2 |
CAD (KiCad official)
- Symbol:
KNS8104A - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
kns8104a-etched.step/kns8104a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kns8104a.step/kns8104a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (7 pp, sha256
827f4e838d537243, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).