# KNS8104A

**KIA Semicon Tech** · MOSFETs · SOT-89

KNS8104A from KIA Semicon Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet gives VGS ±20 V (absolute maximum) and VGS(TH) of 1.0 to 2.5 V at ID = 250 µA. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the datasheet gives VDSS of 40 V and continuous ID of 30 A at TC = 25 °C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit beyond the device absolute maximum ratings. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 40 |  |  | V | VGS=0V,ID=250uA | 3 |
| Drain-source leakage current | IDSS |  |  | 1 | uA | VDS=40V, VGS=0V | 3 |
| Gate-source forward leakage | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate threshold voltage | VGS(TH) | 1 | 1.5 | 2.5 | V | VDS= VGS,ID=250uA | 3 |
| Drain-source on-resistance | RDS(on) |  | 12 | 16 | mΩ | VGS=10V,ID=20A | 3 |
| Drain-source on-resistance | RDS(on) |  | 16.5 | 24 | mΩ | VGS=4.5V,ID=10A | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 30 | A |  | 3 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 120 | A |  | 3 |
| Diode forward voltage | VSD |  |  | 1.2 | V | ISD=20A,VGS=0V,TJ=25°C | 3 |
| Drain-source voltage | VDSS |  |  | 40 | V | TC=25°C unless otherwise noted | 2 |
| Continuous drain current | ID |  |  | 30 | A | TC=25°C | 2 |
| Continuous drain current | ID |  |  | 19 | A | TC=100°C | 2 |
| Pulsed drain current | IDM |  |  | 120 | A | TC=25°C unless otherwise noted | 2 |
| Gate-source voltage | VGS | -20 |  | 20 | V | TC=25°C unless otherwise noted | 2 |
| Single pulse avalanche energy | EAS |  |  | 25 | mJ | TJ=25°C, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω (note 2) | 2 |
| Power dissipation (TC=25°C) | PD |  |  | 48 | W | TC=25°C | 2 |
| Operating junction and storage temperature range | TJ ,TSTG | -55 |  | 150 | ºC |  | 2 |
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL |  |  | 300 | ºC | 1/8" from case for 5 seconds | 2 |

## CAD (KiCad official)

- Symbol: `KNS8104A`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `kns8104a-etched.step` / `kns8104a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kns8104a.step` / `kns8104a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KIA Semicon Tech datasheet](docs/kns8104a-datasheet.pdf) (7 pp, sha256 `827f4e838d537243`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/kns8104a-datasheet.pdf)