# KNS5610A

**KIA Semicon Tech** · MOSFETs · SOT-89

KNS5610A from KIA Semicon Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at +20 V (absolute maximum). |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage VDSS is rated at 100 V and the continuous drain current at 7 A (TC=25°C, VGS=10V, limited by maximum junction temperature). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet rates continuous source current IS at 7 A and maximum pulsed current ISM at 49 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 100 |  |  | V | VGS=0V,ID=250μA | 3 |
| Drain-source on-resistance | RDS(on) |  | 98 | 115 | mΩ | VGS=10V,ID=5A | 3 |
| Drain-source on-resistance | RDS(on) |  | 110 | 125 | mΩ | VGS=4.5V,ID=3A | 3 |
| Gate threshold voltage | VGS(TH) | 1 | 1.85 | 3 | V | VDS= VGS,ID=250uA | 3 |
| Drain-source leakage current (TJ=25°C) | IDSS |  |  | 1 | μA | VDS=80V, VGS=0V, TJ=25°C | 3 |
| Drain-source leakage current (TJ=55°C) | IDSS |  |  | 5 | μA | VDS=80V, VGS=0V, TJ=55°C | 3 |
| Gate-source forward leakage | IGSS |  |  | 100 | nA | VGS=+20V, VDS=0V | 3 |
| Diode forward voltage | VSD |  |  | 1.3 | V | IS=1A, VGS=0V, TJ=25°C | 3 |
| Maximum pulsed current | ISM |  |  | 49 | A |  | 3 |
| Continuous source current | IS |  |  | 7 | A | VD=VG=0V, Force current | 3 |
| Drain-source voltage | VDSS |  |  | 100 | V |  | 2 |
| Gate-source voltage | VGS |  |  | 20 | V |  | 2 |
| Continuous drain current | ID |  |  | 7 | A | VGS@10V, TC=25°C | 2 |
| Continuous drain current | ID |  |  | 5.2 | A | VGS@10V, TC=100°C | 2 |
| Continuous drain current | ID |  |  | 2 | A | VGS@10V, TA=25°C | 2 |
| Continuous drain current | ID |  |  | 1.4 | A | VGS@10V, TA=100°C | 2 |
| Pulsed drain current | IDM |  |  | 14 | A |  | 2 |
| Power dissipation | PD |  |  | 22.7 | W | TC=25°C | 2 |
| Avalanche current | IAS |  |  | 6 | A |  | 2 |
| Operating junction and storage temperature range | TJ ,TSTG | -55 |  | 150 | ºC |  | 2 |
| Thermal resistance junction-case | RθJC |  |  | 2.6 | ºC/W |  | 2 |
| Thermal resistance junction-ambient | RθJA |  |  | 48 | ºC/W |  | 2 |

## CAD (KiCad official)

- Symbol: `KNS5610A`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `kns5610a-etched.step` / `kns5610a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kns5610a.step` / `kns5610a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KIA Semicon Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586183980434018304) (5 pp, sha256 `52312296b2f17a77`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/kns5610a-datasheet.pdf)