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KNS5610A

Public Made by Adom

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KIA Semicon Tech MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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KNS5610A

KIA Semicon Tech · MOSFETs · SOT-89

KNS5610A from KIA Semicon Tech, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at +20 V (absolute maximum).
2 Drain passive Drain terminal of the N-channel MOSFET; the drain-source voltage VDSS is rated at 100 V and the continuous drain current at 7 A (TC=25°C, VGS=10V, limited by maximum junction temperature).
3 Source passive Source terminal of the N-channel MOSFET; the datasheet rates continuous source current IS at 7 A and maximum pulsed current ISM at 49 A.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 100 V VGS=0V,ID=250μA 3
Drain-source on-resistance RDS(on) 98 115 mΩ VGS=10V,ID=5A 3
Drain-source on-resistance RDS(on) 110 125 mΩ VGS=4.5V,ID=3A 3
Gate threshold voltage VGS(TH) 1 1.85 3 V VDS= VGS,ID=250uA 3
Drain-source leakage current (TJ=25°C) IDSS 1 μA VDS=80V, VGS=0V, TJ=25°C 3
Drain-source leakage current (TJ=55°C) IDSS 5 μA VDS=80V, VGS=0V, TJ=55°C 3
Gate-source forward leakage IGSS 100 nA VGS=+20V, VDS=0V 3
Diode forward voltage VSD 1.3 V IS=1A, VGS=0V, TJ=25°C 3
Maximum pulsed current ISM 49 A 3
Continuous source current IS 7 A VD=VG=0V, Force current 3
Drain-source voltage VDSS 100 V 2
Gate-source voltage VGS 20 V 2
Continuous drain current ID 7 A VGS@10V, TC=25°C 2
Continuous drain current ID 5.2 A VGS@10V, TC=100°C 2
Continuous drain current ID 2 A VGS@10V, TA=25°C 2
Continuous drain current ID 1.4 A VGS@10V, TA=100°C 2
Pulsed drain current IDM 14 A 2
Power dissipation PD 22.7 W TC=25°C 2
Avalanche current IAS 6 A 2
Operating junction and storage temperature range TJ ,TSTG -55 150 ºC 2
Thermal resistance junction-case RθJC 2.6 ºC/W 2
Thermal resistance junction-ambient RθJA 48 ºC/W 2

CAD (KiCad official)

  • Symbol: KNS5610A
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: kns5610a-etched.step / kns5610a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kns5610a.step / kns5610a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (5 pp, sha256 52312296b2f17a77, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF