# KNB3306C

**KIA Semicon Tech** · MOSFETs · TO-263

KNB3306C from KIA Semicon Tech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate control terminal; the datasheet rates gate-source voltage VGS at ±25 V as an absolute maximum. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 68 V and continuous drain current ID at 80 A (TC=25°C). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet rates maximum continuous diode forward current IS at 80 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 68 |  |  | V | VGS=0V,ID=250uA | 3 |
| Drain-source leakage current | IDSS |  |  | 1 | uA | VDS=68V, VGS=0V | 3 |
| Gate-source forward leakage | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Gate threshold voltage | VGS(TH) | 2 | 3 | 4 | V | VDS=VGS,ID=250uA | 3 |
| Drain-source on-resistance | RDS(on) |  | 6.5 | 8.5 | mΩ | VGS=10V,ID=20A | 3 |
| Diode forward voltage | VSD |  |  | 1.2 | V | ISD=20A,VGS=0V, TJ=25°C | 3 |
| Maximum continuous drain-source diode forward current | IS |  |  | 80 | A |  | 3 |
| Maximum pulsed drain-source diode forward current | ISM |  |  | 320 | A |  | 3 |
| Drain-source voltage | VDSS |  |  | 68 | V | TC=25°C unless otherwise noted | 2 |
| Continuous drain current | ID |  |  | 80 | A | TC=25°C | 2 |
| Continuous drain current | ID |  |  | 52 | A | TC=100°C | 2 |
| Pulsed drain current | IDM |  |  | 320 | A |  | 2 |
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 2 |
| Single pulse avalanche energy | EAS |  |  | 260 | mJ |  | 2 |
| Power dissipation | PD |  |  | 125 | W | TC=25°C | 2 |
| Operating junction and storage temperature range | TJ,TSTG | -55 |  | 150 | °C |  | 2 |
| Maximum lead temperature for soldering purposes | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 2 |
| Thermal resistance junction-case | RθJC |  |  | 1 | ºC/W |  | 2 |

## CAD (KiCad official)

- Symbol: `KNB3306C`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `knb3306c-etched.step` / `knb3306c-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `knb3306c.step` / `knb3306c.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KIA Semicon Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756590898916806656) (7 pp, sha256 `f3992d89d6c91d51`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/knb3306c-datasheet.pdf)