component
KNB3306C
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| knb3306c-etched.glb | 17d ago |
| knb3306c-etched.step | 17d ago |
| knb3306c-hero.glb | 17d ago |
| knb3306c-hero.overlay.json | 17d ago |
| knb3306c.glb | 17d ago |
| knb3306c.kicad_mod | 17d ago |
| knb3306c.kicad_sym | 17d ago |
| knb3306c.lbr | 17d ago |
| knb3306c.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
KNB3306C
KIA Semicon Tech · MOSFETs · TO-263
KNB3306C from KIA Semicon Tech, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | MOSFET gate control terminal; the datasheet rates gate-source voltage VGS at ±25 V as an absolute maximum. |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; the datasheet rates drain-source voltage VDSS at 68 V and continuous drain current ID at 80 A (TC=25°C). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; the datasheet rates maximum continuous diode forward current IS at 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 68 | V | VGS=0V,ID=250uA | 3 | ||
| Drain-source leakage current | IDSS | 1 | uA | VDS=68V, VGS=0V | 3 | ||
| Gate-source forward leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate threshold voltage | VGS(TH) | 2 | 3 | 4 | V | VDS=VGS,ID=250uA | 3 |
| Drain-source on-resistance | RDS(on) | 6.5 | 8.5 | mΩ | VGS=10V,ID=20A | 3 | |
| Diode forward voltage | VSD | 1.2 | V | ISD=20A,VGS=0V, TJ=25°C | 3 | ||
| Maximum continuous drain-source diode forward current | IS | 80 | A | 3 | |||
| Maximum pulsed drain-source diode forward current | ISM | 320 | A | 3 | |||
| Drain-source voltage | VDSS | 68 | V | TC=25°C unless otherwise noted | 2 | ||
| Continuous drain current | ID | 80 | A | TC=25°C | 2 | ||
| Continuous drain current | ID | 52 | A | TC=100°C | 2 | ||
| Pulsed drain current | IDM | 320 | A | 2 | |||
| Gate-source voltage | VGS | -25 | 25 | V | 2 | ||
| Single pulse avalanche energy | EAS | 260 | mJ | 2 | |||
| Power dissipation | PD | 125 | W | TC=25°C | 2 | ||
| Operating junction and storage temperature range | TJ,TSTG | -55 | 150 | °C | 2 | ||
| Maximum lead temperature for soldering purposes | TL | 300 | °C | 1/8" from case for 5 seconds | 2 | ||
| Thermal resistance junction-case | RθJC | 1 | ºC/W | 2 |
CAD (KiCad official)
- Symbol:
KNB3306C - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
knb3306c-etched.step/knb3306c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);knb3306c.step/knb3306c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (7 pp, sha256
f3992d89d6c91d51, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).