KIA2806AP

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  "title": "KIA2806AP",
  "brief": "KIA Semicon Tech MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
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    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. MOSFET control terminal; VGS(th) = 2.0-4.0 V (typ. 3.0 V). Absolute maximum VGSS = ±25 V. Drive with VGS = 10 V for rated RDS(on) of 3.5 mΩ typ."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain. High-current N-MOSFET drain terminal; VDSS = 60 V, ID = 150 A at TC=25°C. Body diode anode is Source, cathode is Drain (VSD typ. 0.8 V at 60 A)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source. N-MOSFET source terminal; typically tied to system ground or the low-side rail in switching topologies. Serves as reference for VGS gate drive."
      }
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        "described": 3,
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      "Manufacturer": "KIA Semicon Tech",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
      "version": 1,
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          "name": "Drain-source voltage",
          "symbol": "VDSS",
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          "conditions": "TC=100ºC",
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        {
          "name": "Pulse drain current",
          "symbol": "IDM",
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          "min": null,
          "typ": null,
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          "conditions": "TC=25ºC",
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          "name": "Avalanche energy, single pulsed",
          "symbol": "EAS",
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          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 1200,
          "conditions": "L=1mH",
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        },
        {
          "name": "Maximum power dissipation (TO-220/263 column)",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
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        {
          "name": "Maximum power dissipation (TO-220/263 column)",
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          "min": null,
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        },
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          "name": "Thermal resistance, junction-ambient",
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          "kind": "thermal",
          "unit": "ºC/W",
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        {
          "name": "Drain-source breakdown voltage",
          "symbol": "BVDSS",
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          "min": 60,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, IDS=250μA",
          "source_page": 3,
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        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
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          "conditions": "VDS=48V, VGS=0V",
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        {
          "name": "Zero gate voltage drain current",
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          "max": 10,
          "conditions": "TJ=85°C",
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        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
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          "min": 2,
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          "max": 4,
          "conditions": "VDS=VGS, ID=250μA",
          "source_page": 3,
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        {
          "name": "Gate leakage current",
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          "conditions": "VGS=+25V, VDS=0V",
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          "name": "Drain-source on-state resistance",
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          "kind": "electrical",
          "unit": "mΩ",
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          "typ": 3.5,
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          "conditions": "VGS=10V, ID=60A",
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          "name": "Diode forward voltage",
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          "typ": 0.8,
          "max": 1.2,
          "conditions": "ISD=60A, VGS=0V",
          "source_page": 3,
          "source": "datasheet"
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  "updated_at": "2026-09-24T23:20:35.185Z"
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