component
KIA2806AP
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownKIA2806AP
KIA Semicon Tech · MOSFETs · TO-220
KIA2806AP from KIA Semicon Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. MOSFET control terminal; VGS(th) = 2.0-4.0 V (typ. 3.0 V). Absolute maximum VGSS = ±25 V. Drive with VGS = 10 V for rated RDS(on) of 3.5 mΩ typ. |
| 2 | D | passive | Drain. High-current N-MOSFET drain terminal; VDSS = 60 V, ID = 150 A at TC=25°C. Body diode anode is Source, cathode is Drain (VSD typ. 0.8 V at 60 A). |
| 3 | S | passive | Source. N-MOSFET source terminal; typically tied to system ground or the low-side rail in switching topologies. Serves as reference for VGS gate drive. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Ordering variants
Same part, different packaging or reel option.
KIA2806AP
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 60 | V | 2 | |||
| Gate-source voltage | VGSS | 25 | V | 2 | |||
| Maximum junction temperature | TJ | 175 | ºC | 2 | |||
| Storage temperature range | TSTG | -55 | 175 | ºC | 2 | ||
| Diode continuous forward current | IS | 150 | A | TC=25ºC | 2 | ||
| Continuous drain current | ID | 150 | A | TC=25ºC | 2 | ||
| Continuous drain current | ID | 105 | A | TC=100ºC | 2 | ||
| Pulse drain current | IDM | 580 | A | TC=25ºC | 2 | ||
| Avalanche energy, single pulsed | EAS | 1200 | mJ | L=1mH | 2 | ||
| Maximum power dissipation (TO-220/263 column) | PD | 230 | W | TC=25ºC | 2 | ||
| Maximum power dissipation (TO-220/263 column) | PD | 115 | W | TC=100ºC | 2 | ||
| Thermal resistance, junction-ambient | RθJA | 62.5 | ºC/W | 2 | |||
| Thermal resistance, junction-case | RθJC | 0.65 | ºC/W | 2 | |||
| Drain-source breakdown voltage | BVDSS | 60 | V | VGS=0V, IDS=250μA | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=48V, VGS=0V | 3 | ||
| Zero gate voltage drain current | IDSS | 10 | μA | TJ=85°C | 3 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 3 |
| Gate leakage current | IGSS | 100 | nA | VGS=+25V, VDS=0V | 3 | ||
| Drain-source on-state resistance | RDS(on)1 | 3.5 | 4.5 | mΩ | VGS=10V, ID=60A | 3 | |
| Diode forward voltage | VSD | 0.8 | 1.2 | V | ISD=60A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
KIA2806AP - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
kia2806ap-etched.step/kia2806ap-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia2806ap.step/kia2806ap.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (None pp, sha256
3c11264f8a1bbd5a, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).