# KIA2806AP

**KIA Semicon Tech** · MOSFETs · TO-220

KIA2806AP from KIA Semicon Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. MOSFET control terminal; VGS(th) = 2.0-4.0 V (typ. 3.0 V). Absolute maximum VGSS = ±25 V. Drive with VGS = 10 V for rated RDS(on) of 3.5 mΩ typ. |
| 2 | D | passive | Drain. High-current N-MOSFET drain terminal; VDSS = 60 V, ID = 150 A at TC=25°C. Body diode anode is Source, cathode is Drain (VSD typ. 0.8 V at 60 A). |
| 3 | S | passive | Source. N-MOSFET source terminal; typically tied to system ground or the low-side rail in switching topologies. Serves as reference for VGS gate drive. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Ordering variants

Same part, different packaging or reel option.

- `KIA2806AP`

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 60 | V |  | 2 |
| Gate-source voltage | VGSS |  |  | 25 | V |  | 2 |
| Maximum junction temperature | TJ |  |  | 175 | ºC |  | 2 |
| Storage temperature range | TSTG | -55 |  | 175 | ºC |  | 2 |
| Diode continuous forward current | IS |  |  | 150 | A | TC=25ºC | 2 |
| Continuous drain current | ID |  |  | 150 | A | TC=25ºC | 2 |
| Continuous drain current | ID |  |  | 105 | A | TC=100ºC | 2 |
| Pulse drain current | IDM |  |  | 580 | A | TC=25ºC | 2 |
| Avalanche energy, single pulsed | EAS |  |  | 1200 | mJ | L=1mH | 2 |
| Maximum power dissipation (TO-220/263 column) | PD |  |  | 230 | W | TC=25ºC | 2 |
| Maximum power dissipation (TO-220/263 column) | PD |  |  | 115 | W | TC=100ºC | 2 |
| Thermal resistance, junction-ambient | RθJA |  |  | 62.5 | ºC/W |  | 2 |
| Thermal resistance, junction-case | RθJC |  |  | 0.65 | ºC/W |  | 2 |
| Drain-source breakdown voltage | BVDSS | 60 |  |  | V | VGS=0V, IDS=250μA | 3 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS=48V, VGS=0V | 3 |
| Zero gate voltage drain current | IDSS |  |  | 10 | μA | TJ=85°C | 3 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 3 |
| Gate leakage current | IGSS |  |  | 100 | nA | VGS=+25V, VDS=0V | 3 |
| Drain-source on-state resistance | RDS(on)1 |  | 3.5 | 4.5 | mΩ | VGS=10V, ID=60A | 3 |
| Diode forward voltage | VSD |  | 0.8 | 1.2 | V | ISD=60A, VGS=0V | 3 |

## CAD (KiCad official)

- Symbol: `KIA2806AP`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `kia2806ap-etched.step` / `kia2806ap-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `kia2806ap.step` / `kia2806ap.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [KIA Semicon Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588897138277830656) (None pp, sha256 `3c11264f8a1bbd5a`, retrieved 2026-08-17, tier: lcsc)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/kia2806ap-datasheet.pdf)