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KIA08TB70DB

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KIA Semicon Tech Fast Recovery / High Efficiency Diodes, TO-263-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KIA08TB70DB

KIA Semicon Tech · Fast Recovery / High Efficiency Diodes · TO-263-2

KIA08TB70DB from KIA Semicon Tech, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode terminal of the fast recovery diode; the datasheet gives no pin-specific limit, and the device is rated 700 V peak repetitive reverse voltage and 8.0 A average rectified forward current at TC = 150°C.
2 Cathode passive Second cathode terminal, listed for the TO-252/TO-263 package only; the datasheet gives no pin-specific limit, and the device is rated 700 V VRRM and 8.0 A IF(AV) at TC = 150°C.
3 Anode passive Anode terminal of the fast recovery diode; the datasheet gives no pin-specific limit, and the device is rated 700 V VRRM and 8.0 A IF(AV) at TC = 150°C.

Key specifications

Parameter Value
Manufacturer KIA Semicon Tech
Package TO-263-2
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward voltage (maximum instantaneous) VF 1.8 2.6 V IF=8.0A, TC=25°C (Note 1) 2
Maximum instantaneous reverse current IR 500 μA VR=600V, TJ=150°C (Note 1) 2
Maximum instantaneous reverse current IR 25 μA VR=600V, TJ=25°C (Note 1) 2
Maximum reverse recovery time trr 30 ns IF=0.5A, IR=1.0A, IREC=0.25A 2
Peak repetitive reverse voltage / working peak reverse voltage / DC blocking voltage VRRM, VRWM, VR 700 V 2
Average rectified forward current IF(AV) 8 A Total device, (Rated VR), TC = 150°C 2
Peak repetitive forward current IFM 16 A Rated VR, square wave, 20 kHz, TC = 150°C 2
Nonrepetitive peak surge current IFSM 100 A Surge at rated load, halfwave, single phase, 60 Hz 2
Operating junction temperature and storage temperature range TJ, Tstg -65 175 ºC 2
Maximum thermal resistance, junction-to-case RθJC 2 ºC/W 2

CAD (KiCad official)

  • Symbol: KIA08TB70DB
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263-2 (KiCad packages3D, STEP)
  • 3D model files: kia08tb70db-etched.step / kia08tb70db-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kia08tb70db.step / kia08tb70db.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KIA Semicon Tech datasheet (2 pp, sha256 bd1938b5428fd9d1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF