component
KIA08TB70DB
Public Made by Adomby adom
KIA Semicon Tech Fast Recovery / High Efficiency Diodes, TO-263-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKIA08TB70DB
KIA Semicon Tech · Fast Recovery / High Efficiency Diodes · TO-263-2
KIA08TB70DB from KIA Semicon Tech, in a TO-263-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal of the fast recovery diode; the datasheet gives no pin-specific limit, and the device is rated 700 V peak repetitive reverse voltage and 8.0 A average rectified forward current at TC = 150°C. |
| 2 | Cathode | passive | Second cathode terminal, listed for the TO-252/TO-263 package only; the datasheet gives no pin-specific limit, and the device is rated 700 V VRRM and 8.0 A IF(AV) at TC = 150°C. |
| 3 | Anode | passive | Anode terminal of the fast recovery diode; the datasheet gives no pin-specific limit, and the device is rated 700 V VRRM and 8.0 A IF(AV) at TC = 150°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-263-2 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage (maximum instantaneous) | VF | 1.8 | 2.6 | V | IF=8.0A, TC=25°C (Note 1) | 2 | |
| Maximum instantaneous reverse current | IR | 500 | μA | VR=600V, TJ=150°C (Note 1) | 2 | ||
| Maximum instantaneous reverse current | IR | 25 | μA | VR=600V, TJ=25°C (Note 1) | 2 | ||
| Maximum reverse recovery time | trr | 30 | ns | IF=0.5A, IR=1.0A, IREC=0.25A | 2 | ||
| Peak repetitive reverse voltage / working peak reverse voltage / DC blocking voltage | VRRM, VRWM, VR | 700 | V | 2 | |||
| Average rectified forward current | IF(AV) | 8 | A | Total device, (Rated VR), TC = 150°C | 2 | ||
| Peak repetitive forward current | IFM | 16 | A | Rated VR, square wave, 20 kHz, TC = 150°C | 2 | ||
| Nonrepetitive peak surge current | IFSM | 100 | A | Surge at rated load, halfwave, single phase, 60 Hz | 2 | ||
| Operating junction temperature and storage temperature range | TJ, Tstg | -65 | 175 | ºC | 2 | ||
| Maximum thermal resistance, junction-to-case | RθJC | 2 | ºC/W | 2 |
CAD (KiCad official)
- Symbol:
KIA08TB70DB - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263-2 (KiCad packages3D, STEP)
- 3D model files:
kia08tb70db-etched.step/kia08tb70db-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kia08tb70db.step/kia08tb70db.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (2 pp, sha256
bd1938b5428fd9d1, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).