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KF6N60D-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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KF6N60D-VB

VBsemi Elec · MOSFETs · TO-252

KF6N60D-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the gate-source voltage is rated at VGS = ±30 V, and the datasheet specifies VGS = 10 V for RDS(on) and Qg tests.
2 D passive Drain of the N-channel MOSFET, rated at VDS = 650 V (minimum breakdown 650 V at VGS = 0 V, ID = 250 µA) with continuous drain current of 5 A at TC = 25 °C.
3 S passive Source of the N-channel MOSFET; the continuous source-drain diode current IS is rated at 5 A and the pulsed diode forward current ISM at 16 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 5 A TC = VGS at 10 V, 25 °C 1
Continuous Drain Current ID 4 A TC = 100 °C 1
Pulsed Drain Current IDM 16 A 1
Single Pulse Avalanche Energy EAS 120 mJ Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A 1
Repetitive Avalanche Current IAR 34 A 1
Maximum Power Dissipation PD 205 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 4.5 V/ns ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 1.6 mm from case, 10 s 1
Mounting Torque 10 lbf · in 6-32 or M3 screw 1
Mounting Torque 1.1 N · m 6-32 or M3 screw 1
Drain-Source Breakdown Voltage VDS 650 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±30 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 650 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 100 µA VDS = 520 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 8 S VDS = 50 V, ID = 2.5 A 2
Continuous Source-Drain Diode Current IS 5 A MOSFET symbol showing the integral reverse p - n junction diode 2
Pulsed Diode Forward Current ISM 16 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 3.2 A, VGS = 0 V 2
Body Diode Reverse Recovery Charge Qrr 2.1 3.2 µC 2

CAD (KiCad official)

  • Symbol: KF6N60D-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: kf6n60d-vb-etched.step / kf6n60d-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); kf6n60d-vb.step / kf6n60d-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 056bbf4a20d3c4ff, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF