component
KF6N60D-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownKF6N60D-VB
VBsemi Elec · MOSFETs · TO-252
KF6N60D-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at VGS = ±30 V, and the datasheet specifies VGS = 10 V for RDS(on) and Qg tests. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated at VDS = 650 V (minimum breakdown 650 V at VGS = 0 V, ID = 250 µA) with continuous drain current of 5 A at TC = 25 °C. |
| 3 | S | passive | Source of the N-channel MOSFET; the continuous source-drain diode current IS is rated at 5 A and the pulsed diode forward current ISM at 16 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 5 | A | TC = VGS at 10 V, 25 °C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A | 1 | ||
| Repetitive Avalanche Current | IAR | 34 | A | 1 | |||
| Maximum Power Dissipation | PD | 205 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 4.5 | V/ns | ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | 1.6 mm from case, 10 s | 1 | ||||
| Mounting Torque | 10 | lbf · in | 6-32 or M3 screw | 1 | |||
| Mounting Torque | 1.1 | N · m | 6-32 or M3 screw | 1 | |||
| Drain-Source Breakdown Voltage | VDS | 650 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±30 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 650 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | µA | VDS = 520 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 8 | S | VDS = 50 V, ID = 2.5 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 5 | A | MOSFET symbol showing the integral reverse p - n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 16 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 3.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 2.1 | 3.2 | µC | 2 |
CAD (KiCad official)
- Symbol:
KF6N60D-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
kf6n60d-vb-etched.step/kf6n60d-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kf6n60d-vb.step/kf6n60d-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
056bbf4a20d3c4ff, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).