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Ray Set visibility: public c35725d 17d ago
{
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  "type": "component",
  "slug": "kcd3008a",
  "title": "KCD3008A",
  "brief": "KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "kcd3008a",
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    "extractor-text"
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  "component": {
    "mpn": "KCD3008A",
    "manufacturer": "KIA Semicon Tech",
    "package": "TO-252",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588944652556767233",
    "parts": {
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      "footprint": "kcd3008a.kicad_mod",
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      "model_3d_step": "kcd3008a-etched.step",
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      "lbr": "kcd3008a.lbr"
    },
    "distributor_links": {
      "lcsc": "C2839422"
    },
    "distributor_check": {
      "checked_at": "2026-10-18T23:17:08Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate terminal of the MOSFET; the datasheet limits gate-source voltage VGS to ±20 V."
      },
      {
        "number": "2",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal; the TO-252 variant is rated VDSS 85 V with continuous drain current of 100 A at TC=25 ºC (silicon limited) and 80 A (package limited)."
      },
      {
        "number": "3",
        "name": "Source",
        "type": "passive",
        "description": "Source terminal, the reference for the 85 V drain-source voltage rating and the ±20 V gate-source voltage limit."
      }
    ],
    "provenance": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin table on page 1 is a flattened two-column layout (DFN5*6 pin, then TO-252/TO-263 pin, then f; Ordering table on page 2 lists KCD3008A as TO-252, so the TO-252 pinout applies. The document header; The TO-252 column of the thermal and rating tables gives no separate tab or heatsink pin. The drain "
        ],
        "pages_sent": 6,
        "cost_usd": 0.0265,
        "at": "2026-10-18T23:16:26"
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      "datasheet": {
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        "pages": 6,
        "sha256": "037d9b18da007d21",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
        "checked": "2026-10-18",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
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        "checked": "2026-10-18",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "KIA Semicon Tech",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "037d9b18da007d21f871282c520d2e443d6ded631990be8a47748459188f80ad",
      "rows": [
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 85,
          "typ": 90,
          "max": null,
          "conditions": "VGS=0V,ID=250μA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": 3,
          "max": 4,
          "conditions": "VDS=VGS, ID=250μA, Tj=25 ºC",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VGS=20V,VDS=0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 4.5,
          "max": 5.5,
          "conditions": "VGS=10V,ID=50A, Tj=25 ºC",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=85V, VGS=0V, Tj=25 ºC",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Diode forward voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.85,
          "max": 1.4,
          "conditions": "VGS=0V,ISD=50A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-to-source voltage",
          "symbol": "VDSS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 85,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current (silicon limited)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "TC=25 ºC (Silicon limited)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current (package limited)",
          "symbol": "ID",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 80,
          "conditions": "TC=25 ºC (Package limited)",
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          "source": "datasheet"
        },
        {
          "name": "Continuous drain current (silicon limited)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 60,
          "conditions": "TC=100 ºC (Silicon limited)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current",
          "symbol": "IDP",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 480,
          "conditions": "TC = 25°C, tp limited by Tjmax",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 560,
          "conditions": "L=0.5mH, Rg=25Ω",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 85,
          "conditions": "TC = 25 ºC",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Junction and storage temperature range",
          "symbol": "TJ, TSTG",
          "kind": "absolute_maximum",
          "unit": "ºC",
          "min": -55,
          "typ": null,
          "max": 175,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-ambient",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "ºC/W",
          "min": null,
          "typ": 60,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction-case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "ºC/W",
          "min": null,
          "typ": 1.76,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
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    "readme",
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  "discovery_triggers": [
    "kcd3008a"
  ],
  "discovery_pitch": "KCD3008A (KIA Semicon Tech) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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  "visibility": {
    "public": true
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}