component
KCD3008A
Public Made by Adomby adom
KIA Semicon Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| kcd3008a-etched.glb | 17d ago |
| kcd3008a-etched.step | 17d ago |
| kcd3008a-hero.glb | 17d ago |
| kcd3008a-hero.overlay.json | 17d ago |
| kcd3008a.glb | 17d ago |
| kcd3008a.kicad_mod | 17d ago |
| kcd3008a.kicad_sym | 17d ago |
| kcd3008a.lbr | 17d ago |
| kcd3008a.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
KCD3008A
KIA Semicon Tech · MOSFETs · TO-252
KCD3008A from KIA Semicon Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the datasheet limits gate-source voltage VGS to ±20 V. |
| 2 | Drain | passive | Drain terminal; the TO-252 variant is rated VDSS 85 V with continuous drain current of 100 A at TC=25 ºC (silicon limited) and 80 A (package limited). |
| 3 | Source | passive | Source terminal, the reference for the 85 V drain-source voltage rating and the ±20 V gate-source voltage limit. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | KIA Semicon Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 85 | 90 | V | VGS=0V,ID=250μA | 3 | |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA, Tj=25 ºC | 3 |
| Gate leakage current | IGSS | 100 | nA | VGS=20V,VDS=0V | 3 | ||
| Drain-source on-resistance | RDS(on) | 4.5 | 5.5 | mΩ | VGS=10V,ID=50A, Tj=25 ºC | 3 | |
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=85V, VGS=0V, Tj=25 ºC | 3 | ||
| Diode forward voltage | VSD | 0.85 | 1.4 | V | VGS=0V,ISD=50A | 3 | |
| Drain-to-source voltage | VDSS | 85 | V | 2 | |||
| Continuous drain current (silicon limited) | ID | 100 | A | TC=25 ºC (Silicon limited) | 2 | ||
| Continuous drain current (package limited) | ID | 80 | A | TC=25 ºC (Package limited) | 2 | ||
| Continuous drain current (silicon limited) | ID | 60 | A | TC=100 ºC (Silicon limited) | 2 | ||
| Pulsed drain current | IDP | 480 | A | TC = 25°C, tp limited by Tjmax | 2 | ||
| Avalanche energy, single pulse | EAS | 560 | mJ | L=0.5mH, Rg=25Ω | 2 | ||
| Gate-source voltage | VGS | -20 | 20 | V | 2 | ||
| Power dissipation | Ptot | 85 | W | TC = 25 ºC | 2 | ||
| Junction and storage temperature range | TJ, TSTG | -55 | 175 | ºC | 2 | ||
| Thermal resistance, junction-ambient | RθJA | 60 | ºC/W | 2 | |||
| Thermal resistance, junction-case | RθJC | 1.76 | ºC/W | 2 |
CAD (KiCad official)
- Symbol:
KCD3008A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
kcd3008a-etched.step/kcd3008a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);kcd3008a.step/kcd3008a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: KIA Semicon Tech datasheet (6 pp, sha256
037d9b18da007d21, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).