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JST136K-800E
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Jiangsu JieJie Microelectronics Thyristors (SCR)/Modules, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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JST136K-800E
Jiangsu JieJie Microelectronics · Thyristors (SCR)/Modules · TO-252
JST136K-800E from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 (MT1) of the triac, rated for VDRM/VRRM 800 V for this -800 variant and an RMS on-state current IT(RMS) of 4 A (TC=110°C) for TO-251/TO-252. |
| 2 | T2 | passive | Main terminal 2 (MT2) of the triac, rated for VDRM/VRRM 800 V for this -800 variant and an RMS on-state current IT(RMS) of 4 A (TC=110°C) for TO-251/TO-252. |
| 3 | G | input | Gate trigger input; peak gate current IGM is limited to 2 A, average gate power PG(AV) to 0.5 W and peak gate power PGM to 5 W, and this E-suffix part has IGT1-3 ≤ 10 mA and IGT4 ≤ 25 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current, Quadrant I-II-III | IGT | 10 | mA | VD=12V, Quadrant Ⅰ-Ⅱ-Ⅲ (sensitivity E column) | 2 | ||
| Gate trigger current, Quadrant IV | IGT | 25 | mA | VD=12V, Quadrant Ⅳ (sensitivity E column) | 2 | ||
| Gate trigger voltage | VGT | 1.5 | V | 2 | |||
| Gate non-trigger voltage | VGD | 0.2 | V | VD=VDRM Tj=125℃ RL=3.3KΩ | 2 | ||
| Latching current, Quadrant Ⅰ-Ⅲ-Ⅳ | IL | 30 | mA | IG=1.2IGT | 2 | ||
| Latching current, Quadrant Ⅱ | IL | 45 | mA | IG=1.2IGT | 2 | ||
| Holding current | IH | 25 | mA | IT=100mA | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 50 | V/μs | VD=2/3VDRM Gate Open Tj=125℃ | 2 | ||
| Critical rate of rise of off-state voltage at commutation | (dV/dt)c | 0.5 | V/μs | (dI/dt)c=1.7A/ms Tj=125℃ | 2 | ||
| On-state voltage | VTM | 1.7 | V | ITM=5.5A tp=380μs Tj=25℃ | 2 | ||
| Off-state leakage current | IDRM | 10 | μA | VD=VDRM VR=VRRM Tj=25℃ | 2 | ||
| Reverse leakage current | IRRM | 1 | mA | Tj=125℃ | 2 | ||
| Storage junction temperature range | Tstg | -40 | 150 | ℃ | 1 | ||
| Operating junction temperature range | Tj | -40 | 125 | ℃ | 1 | ||
| Repetitive peak off-state voltage | VDRM | 800 | V | Tj=25℃, 800 V variant (table prints 600/800) | 1 | ||
| Repetitive peak reverse voltage | VRRM | 800 | V | Tj=25℃, 800 V variant (table prints 600/800) | 1 | ||
| RMS on-state current | IT(RMS) | 4 | A | TO-251/TO-252, TC=110℃ | 1 | ||
| Non repetitive surge peak on-state current | ITSM | 25 | A | full cycle, F=50Hz | 1 | ||
| I2t value for fusing | I2t | 3.1 | A2s | tp=10ms | 1 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/μs | IG=2×IGT, Quadrant Ⅰ-Ⅱ-Ⅲ | 1 | ||
| Critical rate of rise of on-state current | dI/dt | 10 | A/μs | IG=2×IGT, Quadrant Ⅳ | 1 | ||
| Peak gate current | IGM | 2 | A | 1 | |||
| Average gate power dissipation | PG(AV) | 0.5 | W | 1 | |||
| Peak gate power | PGM | 5 | W | 1 | |||
| Thermal resistance junction to case (AC), TO-251/TO-252 | Rth(j-c) | 4 | ℃/W | junction to case (AC) | 2 |
CAD (KiCad official)
- Symbol:
JST136K-800E - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jst136k-800e-etched.step/jst136k-800e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jst136k-800e.step/jst136k-800e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (7 pp, sha256
c67952056c45b458, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# JST136K-800E
**Jiangsu JieJie Microelectronics** · Thyristors (SCR)/Modules · TO-252
JST136K-800E from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | T1 | passive | Main terminal 1 (MT1) of the triac, rated for VDRM/VRRM 800 V for this -800 variant and an RMS on-state current IT(RMS) of 4 A (TC=110°C) for TO-251/TO-252. |
| 2 | T2 | passive | Main terminal 2 (MT2) of the triac, rated for VDRM/VRRM 800 V for this -800 variant and an RMS on-state current IT(RMS) of 4 A (TC=110°C) for TO-251/TO-252. |
| 3 | G | input | Gate trigger input; peak gate current IGM is limited to 2 A, average gate power PG(AV) to 0.5 W and peak gate power PGM to 5 W, and this E-suffix part has IGT1-3 ≤ 10 mA and IGT4 ≤ 25 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current, Quadrant I-II-III | IGT | | | 10 | mA | VD=12V, Quadrant Ⅰ-Ⅱ-Ⅲ (sensitivity E column) | 2 |
| Gate trigger current, Quadrant IV | IGT | | | 25 | mA | VD=12V, Quadrant Ⅳ (sensitivity E column) | 2 |
| Gate trigger voltage | VGT | | | 1.5 | V | | 2 |
| Gate non-trigger voltage | VGD | 0.2 | | | V | VD=VDRM Tj=125℃ RL=3.3KΩ | 2 |
| Latching current, Quadrant Ⅰ-Ⅲ-Ⅳ | IL | | | 30 | mA | IG=1.2IGT | 2 |
| Latching current, Quadrant Ⅱ | IL | | | 45 | mA | IG=1.2IGT | 2 |
| Holding current | IH | | | 25 | mA | IT=100mA | 2 |
| Critical rate of rise of off-state voltage | dV/dt | 50 | | | V/μs | VD=2/3VDRM Gate Open Tj=125℃ | 2 |
| Critical rate of rise of off-state voltage at commutation | (dV/dt)c | 0.5 | | | V/μs | (dI/dt)c=1.7A/ms Tj=125℃ | 2 |
| On-state voltage | VTM | | | 1.7 | V | ITM=5.5A tp=380μs Tj=25℃ | 2 |
| Off-state leakage current | IDRM | | | 10 | μA | VD=VDRM VR=VRRM Tj=25℃ | 2 |
| Reverse leakage current | IRRM | | | 1 | mA | Tj=125℃ | 2 |
| Storage junction temperature range | Tstg | -40 | | 150 | ℃ | | 1 |
| Operating junction temperature range | Tj | -40 | | 125 | ℃ | | 1 |
| Repetitive peak off-state voltage | VDRM | | | 800 | V | Tj=25℃, 800 V variant (table prints 600/800) | 1 |
| Repetitive peak reverse voltage | VRRM | | | 800 | V | Tj=25℃, 800 V variant (table prints 600/800) | 1 |
| RMS on-state current | IT(RMS) | | | 4 | A | TO-251/TO-252, TC=110℃ | 1 |
| Non repetitive surge peak on-state current | ITSM | | | 25 | A | full cycle, F=50Hz | 1 |
| I2t value for fusing | I2t | | | 3.1 | A2s | tp=10ms | 1 |
| Critical rate of rise of on-state current | dI/dt | | | 50 | A/μs | IG=2×IGT, Quadrant Ⅰ-Ⅱ-Ⅲ | 1 |
| Critical rate of rise of on-state current | dI/dt | | | 10 | A/μs | IG=2×IGT, Quadrant Ⅳ | 1 |
| Peak gate current | IGM | | | 2 | A | | 1 |
| Average gate power dissipation | PG(AV) | | | 0.5 | W | | 1 |
| Peak gate power | PGM | | | 5 | W | | 1 |
| Thermal resistance junction to case (AC), TO-251/TO-252 | Rth(j-c) | | 4 | | ℃/W | junction to case (AC) | 2 |
## CAD (KiCad official)
- Symbol: `JST136K-800E`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `jst136k-800e-etched.step` / `jst136k-800e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jst136k-800e.step` / `jst136k-800e.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Jiangsu JieJie Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586204874724298752) (7 pp, sha256 `c67952056c45b458`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/jst136k-800e-datasheet.pdf)