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Contents

README

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JST136K-800E

Jiangsu JieJie Microelectronics · Thyristors (SCR)/Modules · TO-252

JST136K-800E from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 T1 passive Main terminal 1 (MT1) of the triac, rated for VDRM/VRRM 800 V for this -800 variant and an RMS on-state current IT(RMS) of 4 A (TC=110°C) for TO-251/TO-252.
2 T2 passive Main terminal 2 (MT2) of the triac, rated for VDRM/VRRM 800 V for this -800 variant and an RMS on-state current IT(RMS) of 4 A (TC=110°C) for TO-251/TO-252.
3 G input Gate trigger input; peak gate current IGM is limited to 2 A, average gate power PG(AV) to 0.5 W and peak gate power PGM to 5 W, and this E-suffix part has IGT1-3 ≤ 10 mA and IGT4 ≤ 25 mA.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current, Quadrant I-II-III IGT 10 mA VD=12V, Quadrant Ⅰ-Ⅱ-Ⅲ (sensitivity E column) 2
Gate trigger current, Quadrant IV IGT 25 mA VD=12V, Quadrant Ⅳ (sensitivity E column) 2
Gate trigger voltage VGT 1.5 V 2
Gate non-trigger voltage VGD 0.2 V VD=VDRM Tj=125℃ RL=3.3KΩ 2
Latching current, Quadrant Ⅰ-Ⅲ-Ⅳ IL 30 mA IG=1.2IGT 2
Latching current, Quadrant Ⅱ IL 45 mA IG=1.2IGT 2
Holding current IH 25 mA IT=100mA 2
Critical rate of rise of off-state voltage dV/dt 50 V/μs VD=2/3VDRM Gate Open Tj=125℃ 2
Critical rate of rise of off-state voltage at commutation (dV/dt)c 0.5 V/μs (dI/dt)c=1.7A/ms Tj=125℃ 2
On-state voltage VTM 1.7 V ITM=5.5A tp=380μs Tj=25℃ 2
Off-state leakage current IDRM 10 μA VD=VDRM VR=VRRM Tj=25℃ 2
Reverse leakage current IRRM 1 mA Tj=125℃ 2
Storage junction temperature range Tstg -40 150 ℃ 1
Operating junction temperature range Tj -40 125 ℃ 1
Repetitive peak off-state voltage VDRM 800 V Tj=25℃, 800 V variant (table prints 600/800) 1
Repetitive peak reverse voltage VRRM 800 V Tj=25℃, 800 V variant (table prints 600/800) 1
RMS on-state current IT(RMS) 4 A TO-251/TO-252, TC=110℃ 1
Non repetitive surge peak on-state current ITSM 25 A full cycle, F=50Hz 1
I2t value for fusing I2t 3.1 A2s tp=10ms 1
Critical rate of rise of on-state current dI/dt 50 A/μs IG=2×IGT, Quadrant Ⅰ-Ⅱ-Ⅲ 1
Critical rate of rise of on-state current dI/dt 10 A/μs IG=2×IGT, Quadrant Ⅳ 1
Peak gate current IGM 2 A 1
Average gate power dissipation PG(AV) 0.5 W 1
Peak gate power PGM 5 W 1
Thermal resistance junction to case (AC), TO-251/TO-252 Rth(j-c) 4 ℃/W junction to case (AC) 2

CAD (KiCad official)

  • Symbol: JST136K-800E
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: jst136k-800e-etched.step / jst136k-800e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jst136k-800e.step / jst136k-800e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (7 pp, sha256 c67952056c45b458, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF