# JSM80N03D

**JSMSEMI** · MOSFETs · TO-252

JSM80N03D from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V, threshold VGS(th) 1V min to 2.5V max at ID=250μA. |
| 2 | D | passive | Drain (also the exposed tab); VDS max 30V, continuous drain current 80A at TC=25℃. |
| 3 | S | passive | Source; continuous source current 80A, pulsed source current 280A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VGS=0V, VDS=30V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 4.2 | 5.5 | mΩ | VGS=10V,ID=30A | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 7.5 | 12 | mΩ | VGS=4.5V,ID=20A | 2 |
| Source-Drain Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V,IS=30A | 2 |
| Continuous Source Current | Is |  |  | 80 | A |  | 2 |
| Pulsed Source Current | lsm |  |  | 280 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 80 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 46 | A | TC=100℃ | 1 |
| Pulsed Drain Current |  |  |  | 280 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 56 | mJ |  | 1 |
| Power Dissipation | PD |  |  | 46 | W | TC=25℃ | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case | RƟJC |  |  | 2.72 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `JSM80N03D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `jsm80n03d-etched.step` / `jsm80n03d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jsm80n03d.step` / `jsm80n03d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [JSMSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603382553458335744) (5 pp, sha256 `bbad338dc91e418c`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/jsm80n03d-datasheet.pdf)