component
JSM80N03D
Public Made by Adomby adom
JSMSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJSM80N03D
JSMSEMI · MOSFETs · TO-252
JSM80N03D from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V, threshold VGS(th) 1V min to 2.5V max at ID=250μA. |
| 2 | D | passive | Drain (also the exposed tab); VDS max 30V, continuous drain current 80A at TC=25℃. |
| 3 | S | passive | Source; continuous source current 80A, pulsed source current 280A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=30V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 4.2 | 5.5 | mΩ | VGS=10V,ID=30A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 7.5 | 12 | mΩ | VGS=4.5V,ID=20A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=30A | 2 | ||
| Continuous Source Current | Is | 80 | A | 2 | |||
| Pulsed Source Current | lsm | 280 | A | 2 | |||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 80 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 46 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | 280 | A | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 56 | mJ | 1 | |||
| Power Dissipation | PD | 46 | W | TC=25℃ | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RƟJC | 2.72 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
JSM80N03D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jsm80n03d-etched.step/jsm80n03d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jsm80n03d.step/jsm80n03d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (5 pp, sha256
bbad338dc91e418c, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).