# JSM4N60D

**JSMSEMI** · MOSFETs · TO-252

JSM4N60D from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum, with a gate threshold of 2.0 V min to 4.0 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, connected to the mounting tab; drain-source voltage is rated at 650 V, with 4.0 A continuous drain current at Tc=25C. |
| 3 | S | passive | Source; the body diode carries up to 4.0 A continuous forward current (16 A pulsed). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 4 | A | Tc=25C | 1 |
| Drain Current - Continuous | ID |  |  | 2.5 | A | Tc=100C (*limited by maximum junction temperature) | 1 |
| Drain Current - Pulsed | IDM |  |  | 16 | A | Note 1 | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 240 | mJ | Note 2 | 1 |
| Avalanche Current | IAR |  |  | 4 | A | Note 1 | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 10 | mJ | Note 1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note 3 | 1 |
| Power Dissipation derating above 25C | PD |  |  | 0.39 | W/C | Derate above 25C | 1 |
| Operating Junction Temperature | Tj |  |  | 150 | C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | C |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 2.5 | C/W | Junction to Case | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 83 | C/W | Junction to Ambient | 1 |
| Drain-source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=650V, VGS=0 | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS=520V, Tc=125C | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 2.2 | 2.6 | Ω | VGS=10 V, ID=2.0A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 4 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 16 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS=0V, IS=4.0A | 2 |

## CAD (KiCad official)

- Symbol: `JSM4N60D`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `jsm4n60d-etched.step` / `jsm4n60d-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jsm4n60d.step` / `jsm4n60d.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [JSMSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603099260389388288) (5 pp, sha256 `39571c2c689db64e`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/jsm4n60d-datasheet.pdf)