component
JSM4N60D
Public Made by Adomby adom
JSMSEMI MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4h ago |
| viewers | 4h ago |
| jsm4n60d-etched.glb | 4h ago |
| jsm4n60d-etched.step | 4h ago |
| jsm4n60d-hero.glb | 4h ago |
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| README.md | 4h ago |
JSM4N60D
JSMSEMI · MOSFETs · TO-252
JSM4N60D from JSMSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum, with a gate threshold of 2.0 V min to 4.0 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, connected to the mounting tab; drain-source voltage is rated at 650 V, with 4.0 A continuous drain current at Tc=25C. |
| 3 | S | passive | Source; the body diode carries up to 4.0 A continuous forward current (16 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | JSMSEMI |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 1 | |||
| Drain Current - Continuous | ID | 4 | A | Tc=25C | 1 | ||
| Drain Current - Continuous | ID | 2.5 | A | Tc=100C (*limited by maximum junction temperature) | 1 | ||
| Drain Current - Pulsed | IDM | 16 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 240 | mJ | Note 2 | 1 | ||
| Avalanche Current | IAR | 4 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 10 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3 | 1 | ||
| Power Dissipation derating above 25C | PD | 0.39 | W/C | Derate above 25C | 1 | ||
| Operating Junction Temperature | Tj | 150 | C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.5 | C/W | Junction to Case | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 83 | C/W | Junction to Ambient | 1 | ||
| Drain-source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=650V, VGS=0 | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=520V, Tc=125C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 2.2 | 2.6 | Ω | VGS=10 V, ID=2.0A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 4 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 16 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=4.0A | 2 |
CAD (KiCad official)
- Symbol:
JSM4N60D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jsm4n60d-etched.step/jsm4n60d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jsm4n60d.step/jsm4n60d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: JSMSEMI datasheet (5 pp, sha256
39571c2c689db64e, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).