# JMTP330N06D-13

**Jiangsu JieJie Microelectronics** · MOSFETs · SOP-8

JMTP330N06D-13 from Jiangsu JieJie Microelectronics, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of N-channel MOSFET 2. |
| 2 | G2 | input | Gate of N-channel MOSFET 2; VGS rated ±20 V max. |
| 3 | S1 | passive | Source of N-channel MOSFET 1. |
| 4 | G1 | input | Gate of N-channel MOSFET 1; VGS rated ±20 V max. |
| 5 | D1 | passive | Drain of N-channel MOSFET 1; VDSS 60 V max, ID 5 A continuous at TA=25℃. |
| 6 | D1 | passive | Drain of N-channel MOSFET 1; VDSS 60 V max, ID 5 A continuous at TA=25℃. |
| 7 | D2 | passive | Drain of N-channel MOSFET 2; VDSS 60 V max, ID 5 A continuous at TA=25℃. |
| 8 | D2 | passive | Drain of N-channel MOSFET 2; VDSS 60 V max, ID 5 A continuous at TA=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 5 | A | TA = 25℃ | 1 |
| Continuous Drain Current | ID |  |  | 3.3 | A | TA = 100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 20 | A | note1 (repetitive rating, pulse width limited by maximum junction temperature) | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 20 | mJ | note2: Starting TJ=25℃, VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω, IAS=9A | 1 |
| Power Dissipation | PD |  |  | 1.74 | W | TA = 25℃ | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 72 | ℃/W |  | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS = 0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 30 | 38 | mΩ | VGS=10V, ID=5A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 36 | 47 | mΩ | VGS=4.5V, ID=3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 5 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 20 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=5A | 2 |

## CAD (KiCad official)

- Symbol: `JMTP330N06D-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `jmtp330n06d-13-etched.step` / `jmtp330n06d-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jmtp330n06d-13.step` / `jmtp330n06d-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Jiangsu JieJie Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603007687193862144) (6 pp, sha256 `c197ded1738cee02`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/jmtp330n06d-13-datasheet.pdf)