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JMTP330N06D-13

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Jiangsu JieJie Microelectronics MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JMTP330N06D-13

Jiangsu JieJie Microelectronics · MOSFETs · SOP-8

JMTP330N06D-13 from Jiangsu JieJie Microelectronics, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of N-channel MOSFET 2.
2 G2 input Gate of N-channel MOSFET 2; VGS rated ±20 V max.
3 S1 passive Source of N-channel MOSFET 1.
4 G1 input Gate of N-channel MOSFET 1; VGS rated ±20 V max.
5 D1 passive Drain of N-channel MOSFET 1; VDSS 60 V max, ID 5 A continuous at TA=25℃.
6 D1 passive Drain of N-channel MOSFET 1; VDSS 60 V max, ID 5 A continuous at TA=25℃.
7 D2 passive Drain of N-channel MOSFET 2; VDSS 60 V max, ID 5 A continuous at TA=25℃.
8 D2 passive Drain of N-channel MOSFET 2; VDSS 60 V max, ID 5 A continuous at TA=25℃.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 5 A TA = 25℃ 1
Continuous Drain Current ID 3.3 A TA = 100℃ 1
Pulsed Drain Current IDM 20 A note1 (repetitive rating, pulse width limited by maximum junction temperature) 1
Single Pulsed Avalanche Energy EAS 20 mJ note2: Starting TJ=25℃, VDD=30V, VGS=10V, L=0.5mH, Rg=25Ω, IAS=9A 1
Power Dissipation PD 1.74 W TA = 25℃ 1
Thermal Resistance, Junction to Ambient RθJA 72 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS = 0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 30 38 mΩ VGS=10V, ID=5A 2
Static Drain-Source on-Resistance RDS(on) 36 47 mΩ VGS=4.5V, ID=3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 5 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 20 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=5A 2

CAD (KiCad official)

  • Symbol: JMTP330N06D-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: jmtp330n06d-13-etched.step / jmtp330n06d-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtp330n06d-13.step / jmtp330n06d-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256 c197ded1738cee02, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF