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JMTP3010D

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Jiangsu JieJie Microelectronics MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JMTP3010D

Jiangsu JieJie Microelectronics · MOSFETs · SOP-8

JMTP3010D from Jiangsu JieJie Microelectronics, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (N-channel, 30V VDSS, 12A continuous drain current).
2 G2 input Gate of MOSFET 2, with gate-source voltage limited to ±20V and threshold of 1.0V to 2.5V.
3 S1 passive Source of MOSFET 1 (N-channel, 30V VDSS, 12A continuous drain current).
4 G1 input Gate of MOSFET 1, with gate-source voltage limited to ±20V and threshold of 1.0V to 2.5V.
5 D1 passive Drain of MOSFET 1, tied to pin 6, with 30V maximum drain-source voltage.
6 D1 passive Drain of MOSFET 1, tied to pin 5, with 30V maximum drain-source voltage.
7 D2 passive Drain of MOSFET 2, tied to pin 8, with 30V maximum drain-source voltage.
8 D2 passive Drain of MOSFET 2, tied to pin 7, with 30V maximum drain-source voltage.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 12 A TA = 25℃ 1
Continuous Drain Current ID 8 A TA = 100℃ 1
Pulsed Drain Current IDM 48 A 1
Single Pulsed Avalanche Energy EAS 16 mJ TJ=25℃, VGS=10V, RG=25Ω, L=0.5mH, IAS=11.5A (note 2) 1
Power Dissipation PD 3 W TA = 25℃ 1
Thermal Resistance, Junction to Ambient RθJA 46 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 9 12 mΩ VGS=10V, ID=12A (note 3) 2
Static Drain-Source on-Resistance RDS(on) 13 18 mΩ VGS=4.5V, ID=10A (note 3) 2
Maximum Continuous Drain to Source Diode Forward Current IS 12 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 48 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=12A 2

CAD (KiCad official)

  • Symbol: JMTP3010D
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: jmtp3010d-etched.step / jmtp3010d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtp3010d.step / jmtp3010d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256 e7f308388976ed24, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF