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JMTL2312A

Jiangsu JieJie Microelectronics · MOSFETs · SOT-23

JMTL2312A from Jiangsu JieJie Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with absolute maximum gate-to-source voltage of ±12 V and threshold of 0.5 to 1.0 V at 250 µA.
2 S passive Source of the N-channel MOSFET; body diode anode, with continuous drain current of 6.8 A at TA = 25°C.
3 D passive Drain of the N-channel MOSFET; maximum drain-to-source voltage 20 V, pulsed drain current 27 A.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID = 250µA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20V, VGS = 0V 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±12V 2
Gate Threshold Voltage VGS(th) 0.5 0.75 1 V VDS = VGS, ID = 250µA 2
Static Drain-Source ON-Resistance RDS(ON) 16 21 mΩ VGS = 4.5V, ID = 4A 2
Static Drain-Source ON-Resistance RDS(ON) 19 25 mΩ VGS = 2.5V, ID = 3A 2
Maximum Continuous Drain to Source Diode Forward Current IS 6.8 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 27 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 6.8A 2
Drain-Source Voltage VDS 20 V TA = 25°C unless otherwise specified 1
Gate-Source Voltage VGS -12 12 V TA = 25°C unless otherwise specified 1
Continuous Drain Current ID 6.8 A TA = 25°C 1
Continuous Drain Current ID 4 A TA = 100°C 1
Pulsed Drain Current IDM 27 A 1
Power Dissipation PD 1.3 W TA = 25°C 1
Thermal Resistance, Junction to Ambient RθJA 97 °C/W Note 2: device mounted on 1 inch² pad of 2oz copper FR4 PCB 1
Junction & Storage Temperature Range TJ, TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: JMTL2312A
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: jmtl2312a-etched.step / jmtl2312a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtl2312a.step / jmtl2312a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256 0065efec2f87582a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF