component
JMTL2312A
Public Made by Adomby adom
Jiangsu JieJie Microelectronics MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJMTL2312A
Jiangsu JieJie Microelectronics · MOSFETs · SOT-23
JMTL2312A from Jiangsu JieJie Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-to-source voltage of ±12 V and threshold of 0.5 to 1.0 V at 250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET; body diode anode, with continuous drain current of 6.8 A at TA = 25°C. |
| 3 | D | passive | Drain of the N-channel MOSFET; maximum drain-to-source voltage 20 V, pulsed drain current 27 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | ID = 250µA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.75 | 1 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | 16 | 21 | mΩ | VGS = 4.5V, ID = 4A | 2 | |
| Static Drain-Source ON-Resistance | RDS(ON) | 19 | 25 | mΩ | VGS = 2.5V, ID = 3A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 6.8 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 27 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 6.8A | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | TA = 25°C unless otherwise specified | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25°C unless otherwise specified | 1 | |
| Continuous Drain Current | ID | 6.8 | A | TA = 25°C | 1 | ||
| Continuous Drain Current | ID | 4 | A | TA = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 27 | A | 1 | |||
| Power Dissipation | PD | 1.3 | W | TA = 25°C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 97 | °C/W | Note 2: device mounted on 1 inch² pad of 2oz copper FR4 PCB | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
JMTL2312A - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
jmtl2312a-etched.step/jmtl2312a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtl2312a.step/jmtl2312a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
0065efec2f87582a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).