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Generated by kicad-footprint-generator · KiCad file format 20260206

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JMTK4006A

Jiangsu JieJie Microelectronics · Bipolar (BJT) · TO-252

JMTK4006A from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±20 V absolute maximum and VGS(th) is 1.3 V min to 2.3 V max.
2	D	passive	Drain terminal; drain-to-source voltage is rated 40 V with a continuous drain current of 70 A and pulsed drain current of 280 A.
3	S	passive	Source terminal; maximum continuous body diode forward current is 70 A and maximum pulsed diode forward current is 280 A.

Key specifications

Parameter	Value
Manufacturer	Jiangsu JieJie Microelectronics
Package	TO-252
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	V(BR)DSS	40			V	ID = 250µA, VGS = 0V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 40V, VGS = 0V	2
Gate-Body Leakage Current	IGSS	-100		100	nA	VDS = 0V, VGS = ±20V	2
Gate Threshold Voltage	VGS(th)	1.3	1.8	2.3	V	VDS = VGS, ID = 250µA	2
Static Drain-Source ON-Resistance	RDS(ON)		4.5	5.9	mΩ	VGS = 10V, ID = 30A	2
Static Drain-Source ON-Resistance	RDS(ON)		6.6	8.6	mΩ	VGS = 4.5V, ID = 20A	2
Maximum Continuous Drain to Source Diode Forward Current	IS			70	A		2
Maximum Pulsed Drain to Source Diode Forward Current	ISM			280	A		2
Drain to Source Diode Forward Voltage	VSD			1.2	V	VGS = 0V, IS = 30A	2
Drain-Source Voltage	VDS			40	V		1
Gate-to-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			70	A	TC = 25°C	1
Continuous Drain Current	ID			44	A	TC = 100°C	1
Pulsed Drain Current	IDM			280	A		1
Single Pulsed Avalanche Energy	EAS			121	mJ		1
Power Dissipation	PD			60	W	TC = 25°C	1
Junction & Storage Temperature Range	TJ, TSTG	-55		150	°C		1
Thermal Resistance, Junction to Ambient	RθJA		34		°C/W	Measured with device mounted on a 1 inch² pad of 2oz copper FR4 PCB (note 3)	1
Thermal Resistance, Junction to Case	RθJC		2.1		°C/W		1

CAD (KiCad official)

Symbol: JMTK4006A
Footprint: Package_TO_SOT_SMD:TO-252-2
3D model: TO-252 (KiCad packages3D, STEP)
3D model files: jmtk4006a-etched.step / jmtk4006a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtk4006a.step / jmtk4006a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256 ede8ed3b04cb9b06, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF