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JMTK4006A
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Jiangsu JieJie Microelectronics Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownJMTK4006A
Jiangsu JieJie Microelectronics · Bipolar (BJT) · TO-252
JMTK4006A from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±20 V absolute maximum and VGS(th) is 1.3 V min to 2.3 V max. |
| 2 | D | passive | Drain terminal; drain-to-source voltage is rated 40 V with a continuous drain current of 70 A and pulsed drain current of 280 A. |
| 3 | S | passive | Source terminal; maximum continuous body diode forward current is 70 A and maximum pulsed diode forward current is 280 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | ID = 250µA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 40V, VGS = 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | 4.5 | 5.9 | mΩ | VGS = 10V, ID = 30A | 2 | |
| Static Drain-Source ON-Resistance | RDS(ON) | 6.6 | 8.6 | mΩ | VGS = 4.5V, ID = 20A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 70 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 280 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 30A | 2 | ||
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 70 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 44 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 121 | mJ | 1 | |||
| Power Dissipation | PD | 60 | W | TC = 25°C | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 34 | °C/W | Measured with device mounted on a 1 inch² pad of 2oz copper FR4 PCB (note 3) | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.1 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
JMTK4006A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jmtk4006a-etched.step/jmtk4006a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtk4006a.step/jmtk4006a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
ede8ed3b04cb9b06, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).