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JMTK290N06A
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Jiangsu JieJie Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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JMTK290N06A
Jiangsu JieJie Microelectronics · MOSFETs · TO-252
JMTK290N06A from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with threshold of 1.0 V min to 2.5 V max at ID=250μA. |
| 2 | D | passive | Drain (middle pin, also the exposed tab); drain-source voltage is rated at 60 V maximum and continuous current is 30 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous forward current is 30 A maximum and pulsed is 120 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | 30 | A | TC = 25℃ | 1 | ||
| Continuous Drain Current | ID | 20 | A | TC = 100℃ | 1 | ||
| Pulsed Drain Current | IDM | 120 | A | note1 | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 23 | mJ | TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=9.6A | 1 | ||
| Power Dissipation | PD | 55 | W | TC = 25℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 2.7 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 21 | 29 | mΩ | VGS=10V, ID=15A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 28 | 40 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 30 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 120 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=30A | 2 | ||
| Input Capacitance | Ciss | 1488 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 72 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 64 | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 | ||
| Total Gate Charge | Qg | 25 | nC | VDS=30V, ID=15A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 4.5 | nC | VDS=30V, ID=15A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 6.5 | nC | VDS=30V, ID=15A, VGS=10V | 2 | ||
| Turn-on Delay Time | td(on) | 7.5 | ns | VDS=30V, ID=15A, RG=1.8Ω, VGS=10V | 2 | ||
| Turn-on Rise Time | tr | 21 | ns | VDS=30V, ID=15A, RG=1.8Ω, VGS=10V | 2 | ||
| Turn-off Delay Time | td(off) | 16 | ns | VDS=30V, ID=15A, RG=1.8Ω, VGS=10V | 2 | ||
| Turn-off Fall Time | tf | 23.5 | ns | VDS=30V, ID=15A, RG=1.8Ω, VGS=10V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 29 | ns | IF=30A, dI/dt=100A/μs | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 45 | nC | IF=30A, dI/dt=100A/μs | 2 |
CAD (KiCad official)
- Symbol:
JMTK290N06A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
jmtk290n06a-etched.step/jmtk290n06a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtk290n06a.step/jmtk290n06a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (7 pp, sha256
e999abf453e02451, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# JMTK290N06A
**Jiangsu JieJie Microelectronics** · MOSFETs · TO-252
JMTK290N06A from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with threshold of 1.0 V min to 2.5 V max at ID=250μA. |
| 2 | D | passive | Drain (middle pin, also the exposed tab); drain-source voltage is rated at 60 V maximum and continuous current is 30 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous forward current is 30 A maximum and pulsed is 120 A maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | V | TC=25℃ | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | TC=25℃ | 1 |
| Continuous Drain Current | ID | | | 30 | A | TC = 25℃ | 1 |
| Continuous Drain Current | ID | | | 20 | A | TC = 100℃ | 1 |
| Pulsed Drain Current | IDM | | | 120 | A | note1 | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 23 | mJ | TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=9.6A | 1 |
| Power Dissipation | PD | | | 55 | W | TC = 25℃ | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 2.7 | ℃/W | | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 175 | ℃ | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 21 | 29 | mΩ | VGS=10V, ID=15A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 28 | 40 | mΩ | VGS=4.5V, ID=10A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 30 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 120 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=30A | 2 |
| Input Capacitance | Ciss | | 1488 | | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 72 | | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 64 | | pF | VDS=25V, VGS=0V, f=1.0MHz | 2 |
| Total Gate Charge | Qg | | 25 | | nC | VDS=30V, ID=15A, VGS=10V | 2 |
| Gate-Source Charge | Qgs | | 4.5 | | nC | VDS=30V, ID=15A, VGS=10V | 2 |
| Gate-Drain Charge | Qgd | | 6.5 | | nC | VDS=30V, ID=15A, VGS=10V | 2 |
| Turn-on Delay Time | td(on) | | 7.5 | | ns | VDS=30V, ID=15A, RG=1.8Ω, VGS=10V | 2 |
| Turn-on Rise Time | tr | | 21 | | ns | VDS=30V, ID=15A, RG=1.8Ω, VGS=10V | 2 |
| Turn-off Delay Time | td(off) | | 16 | | ns | VDS=30V, ID=15A, RG=1.8Ω, VGS=10V | 2 |
| Turn-off Fall Time | tf | | 23.5 | | ns | VDS=30V, ID=15A, RG=1.8Ω, VGS=10V | 2 |
| Body Diode Reverse Recovery Time | trr | | 29 | | ns | IF=30A, dI/dt=100A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 45 | | nC | IF=30A, dI/dt=100A/μs | 2 |
## CAD (KiCad official)
- Symbol: `JMTK290N06A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `jmtk290n06a-etched.step` / `jmtk290n06a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jmtk290n06a.step` / `jmtk290n06a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Jiangsu JieJie Microelectronics datasheet](docs/jmtk290n06a-datasheet.pdf) (7 pp, sha256 `e999abf453e02451`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/jmtk290n06a-datasheet.pdf)