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JMTK290N06A

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Jiangsu JieJie Microelectronics MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JMTK290N06A

Jiangsu JieJie Microelectronics · MOSFETs · TO-252

JMTK290N06A from Jiangsu JieJie Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with threshold of 1.0 V min to 2.5 V max at ID=250μA.
2 D passive Drain (middle pin, also the exposed tab); drain-source voltage is rated at 60 V maximum and continuous current is 30 A at TC=25℃.
3 S passive Source; body diode continuous forward current is 30 A maximum and pulsed is 120 A maximum.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V TC=25℃ 1
Gate-Source Voltage VGSS -20 20 V TC=25℃ 1
Continuous Drain Current ID 30 A TC = 25℃ 1
Continuous Drain Current ID 20 A TC = 100℃ 1
Pulsed Drain Current IDM 120 A note1 1
Single Pulsed Avalanche Energy EAS 23 mJ TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=9.6A 1
Power Dissipation PD 55 W TC = 25℃ 1
Thermal Resistance, Junction to Case RθJC 2.7 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 21 29 mΩ VGS=10V, ID=15A 2
Static Drain-Source on-Resistance RDS(on) 28 40 mΩ VGS=4.5V, ID=10A 2
Maximum Continuous Drain to Source Diode Forward Current IS 30 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 120 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=30A 2
Input Capacitance Ciss 1488 pF VDS=25V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 72 pF VDS=25V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 64 pF VDS=25V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 25 nC VDS=30V, ID=15A, VGS=10V 2
Gate-Source Charge Qgs 4.5 nC VDS=30V, ID=15A, VGS=10V 2
Gate-Drain Charge Qgd 6.5 nC VDS=30V, ID=15A, VGS=10V 2
Turn-on Delay Time td(on) 7.5 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-on Rise Time tr 21 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-off Delay Time td(off) 16 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Turn-off Fall Time tf 23.5 ns VDS=30V, ID=15A, RG=1.8Ω, VGS=10V 2
Body Diode Reverse Recovery Time trr 29 ns IF=30A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 45 nC IF=30A, dI/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: JMTK290N06A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: jmtk290n06a-etched.step / jmtk290n06a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtk290n06a.step / jmtk290n06a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (7 pp, sha256 e999abf453e02451, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF