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JMTK2006A
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Jiangsu JieJie Microelectronics MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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JMTK2006A
Jiangsu JieJie Microelectronics · MOSFETs · TO-252-2
JMTK2006A from Jiangsu JieJie Microelectronics, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±12 V maximum, with threshold of 0.5 V min to 1.1 V max at ID = 250 µA. |
| 2 | D | passive | Drain (center lead, also the exposed tab); drain-to-source voltage is rated 20 V maximum with 60 A continuous drain current at TC = 25°C. |
| 3 | S | passive | Source; maximum continuous body-diode forward current is 60 A and pulsed is 240 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | ID = 250µA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.9 | 1.1 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | 4.8 | 6.2 | mΩ | VGS = 4.5V, ID = 25A | 2 | |
| Static Drain-Source ON-Resistance | RDS(ON) | 6.5 | 8.5 | mΩ | VGS = 2.5V, ID = 15A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 60 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 240 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 30A | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 60 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 38 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 240 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 64 | mJ | Note 2: Starting TJ=25C, VDD=10V, VG=10V, RG=25ohm, L=0.5mH, IAS=16A | 1 | ||
| Power Dissipation | PD | 37 | W | TC = 25°C | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 32 | °C/W | Note 3: mounted on 1 inch² pad of 2oz copper FR4 PCB | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.4 | °C/W | 1 | |||
| Input Capacitance | Ciss | 2007 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 278 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 252 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 2 | ||
| Total Gate Charge | Qg | 23 | nC | VGS = 0 to 4.5V, VDS = 10V, ID = 20A | 2 | ||
| Gate Source Charge | Qgs | 4 | nC | VGS = 0 to 4.5V, VDS = 10V, ID = 20A | 2 | ||
| Gate Drain (Miller) Charge | Qgd | 7 | nC | VGS = 0 to 4.5V, VDS = 10V, ID = 20A | 2 | ||
| Turn-On Delay Time | td(on) | 12 | ns | VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω | 2 | ||
| Turn-On Rise Time | tr | 33 | ns | VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 48 | ns | VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω | 2 | ||
| Turn-Off Fall Time | tf | 95 | ns | VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 11 | ns | IF = 20A, di/dt = 100A/us | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 2.5 | nC | IF = 20A, di/dt = 100A/us | 2 |
CAD (KiCad official)
- Symbol:
JMTK2006A - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files:
jmtk2006a-etched.step/jmtk2006a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);jmtk2006a.step/jmtk2006a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256
cb65dca7f5eedf31, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# JMTK2006A
**Jiangsu JieJie Microelectronics** · MOSFETs · TO-252-2
JMTK2006A from Jiangsu JieJie Microelectronics, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated at ±12 V maximum, with threshold of 0.5 V min to 1.1 V max at ID = 250 µA. |
| 2 | D | passive | Drain (center lead, also the exposed tab); drain-to-source voltage is rated 20 V maximum with 60 A continuous drain current at TC = 25°C. |
| 3 | S | passive | Source; maximum continuous body-diode forward current is 60 A and pulsed is 240 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Jiangsu JieJie Microelectronics |
| Package | TO-252-2 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | ID = 250µA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 20V, VGS = 0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.9 | 1.1 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | | 4.8 | 6.2 | mΩ | VGS = 4.5V, ID = 25A | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | | 6.5 | 8.5 | mΩ | VGS = 2.5V, ID = 15A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | | | 60 | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | | | 240 | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | 1.2 | V | VGS = 0V, IS = 30A | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 60 | A | TC = 25°C | 1 |
| Continuous Drain Current | ID | | | 38 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 240 | A | | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 64 | mJ | Note 2: Starting TJ=25C, VDD=10V, VG=10V, RG=25ohm, L=0.5mH, IAS=16A | 1 |
| Power Dissipation | PD | | | 37 | W | TC = 25°C | 1 |
| Junction & Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 32 | °C/W | Note 3: mounted on 1 inch² pad of 2oz copper FR4 PCB | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 3.4 | °C/W | | 1 |
| Input Capacitance | Ciss | | 2007 | | pF | VGS = 0V, VDS = 10V, f = 1MHz | 2 |
| Output Capacitance | Coss | | 278 | | pF | VGS = 0V, VDS = 10V, f = 1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 252 | | pF | VGS = 0V, VDS = 10V, f = 1MHz | 2 |
| Total Gate Charge | Qg | | 23 | | nC | VGS = 0 to 4.5V, VDS = 10V, ID = 20A | 2 |
| Gate Source Charge | Qgs | | 4 | | nC | VGS = 0 to 4.5V, VDS = 10V, ID = 20A | 2 |
| Gate Drain (Miller) Charge | Qgd | | 7 | | nC | VGS = 0 to 4.5V, VDS = 10V, ID = 20A | 2 |
| Turn-On Delay Time | td(on) | | 12 | | ns | VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω | 2 |
| Turn-On Rise Time | tr | | 33 | | ns | VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω | 2 |
| Turn-Off Delay Time | td(off) | | 48 | | ns | VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω | 2 |
| Turn-Off Fall Time | tf | | 95 | | ns | VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω | 2 |
| Body Diode Reverse Recovery Time | trr | | 11 | | ns | IF = 20A, di/dt = 100A/us | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 2.5 | | nC | IF = 20A, di/dt = 100A/us | 2 |
## CAD (KiCad official)
- Symbol: `JMTK2006A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2 (KiCad packages3D, STEP)
- 3D model files: `jmtk2006a-etched.step` / `jmtk2006a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `jmtk2006a.step` / `jmtk2006a.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Jiangsu JieJie Microelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603058463522377728) (6 pp, sha256 `cb65dca7f5eedf31`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/jmtk2006a-datasheet.pdf)