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JMTK2006A

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Jiangsu JieJie Microelectronics MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JMTK2006A

Jiangsu JieJie Microelectronics · MOSFETs · TO-252-2

JMTK2006A from Jiangsu JieJie Microelectronics, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated at ±12 V maximum, with threshold of 0.5 V min to 1.1 V max at ID = 250 µA.
2 D passive Drain (center lead, also the exposed tab); drain-to-source voltage is rated 20 V maximum with 60 A continuous drain current at TC = 25°C.
3 S passive Source; maximum continuous body-diode forward current is 60 A and pulsed is 240 A.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package TO-252-2
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V ID = 250µA, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20V, VGS = 0V 2
Gate-Body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±12V 2
Gate Threshold Voltage VGS(th) 0.5 0.9 1.1 V VDS = VGS, ID = 250µA 2
Static Drain-Source ON-Resistance RDS(ON) 4.8 6.2 mΩ VGS = 4.5V, ID = 25A 2
Static Drain-Source ON-Resistance RDS(ON) 6.5 8.5 mΩ VGS = 2.5V, ID = 15A 2
Maximum Continuous Drain to Source Diode Forward Current IS 60 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 240 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 30A 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 60 A TC = 25°C 1
Continuous Drain Current ID 38 A TC = 100°C 1
Pulsed Drain Current IDM 240 A 1
Single Pulsed Avalanche Energy EAS 64 mJ Note 2: Starting TJ=25C, VDD=10V, VG=10V, RG=25ohm, L=0.5mH, IAS=16A 1
Power Dissipation PD 37 W TC = 25°C 1
Junction & Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction to Ambient RθJA 32 °C/W Note 3: mounted on 1 inch² pad of 2oz copper FR4 PCB 1
Thermal Resistance, Junction to Case RθJC 3.4 °C/W 1
Input Capacitance Ciss 2007 pF VGS = 0V, VDS = 10V, f = 1MHz 2
Output Capacitance Coss 278 pF VGS = 0V, VDS = 10V, f = 1MHz 2
Reverse Transfer Capacitance Crss 252 pF VGS = 0V, VDS = 10V, f = 1MHz 2
Total Gate Charge Qg 23 nC VGS = 0 to 4.5V, VDS = 10V, ID = 20A 2
Gate Source Charge Qgs 4 nC VGS = 0 to 4.5V, VDS = 10V, ID = 20A 2
Gate Drain (Miller) Charge Qgd 7 nC VGS = 0 to 4.5V, VDS = 10V, ID = 20A 2
Turn-On Delay Time td(on) 12 ns VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω 2
Turn-On Rise Time tr 33 ns VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω 2
Turn-Off Delay Time td(off) 48 ns VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω 2
Turn-Off Fall Time tf 95 ns VGS = 4.5V, VDD = 10V, ID = 20A, RGEN = 3Ω 2
Body Diode Reverse Recovery Time trr 11 ns IF = 20A, di/dt = 100A/us 2
Body Diode Reverse Recovery Charge Qrr 2.5 nC IF = 20A, di/dt = 100A/us 2

CAD (KiCad official)

  • Symbol: JMTK2006A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: jmtk2006a-etched.step / jmtk2006a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtk2006a.step / jmtk2006a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256 cb65dca7f5eedf31, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF