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JMTJ210P02A

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Jiangsu JieJie Microelectronics MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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JMTJ210P02A

Jiangsu JieJie Microelectronics · MOSFETs · SOT-23-3L

JMTJ210P02A from Jiangsu JieJie Microelectronics, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12 V absolute maximum, threshold VGS(th) -0.4 to -1.0 V at ID = -250 µA.
2 S passive Source; continuous drain-to-source diode current up to -7 A, with the MOSFET rated for -7 A continuous drain current at TA = 25 °C.
3 D passive Drain; drain-source voltage rated -20 V, continuous drain current -7 A at TA = 25 °C and pulsed -28 A.

Key specifications

Parameter Value
Manufacturer Jiangsu JieJie Microelectronics
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -20 V 1
Gate-Source Voltage VGSS -12 12 V 1
Continuous Drain Current ID -7 A TA = 25℃ 1
Continuous Drain Current ID -4.6 A TA = 100℃ 1
Pulsed Drain Current IDM -28 A note1 1
Power Dissipation PD 2 W TA = 25℃ 1
Thermal Resistance, Junction to Ambient RθJA 62.5 ℃/W 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage V(BR)DSS -20 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -20V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±12V 2
Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 18.7 24.5 mΩ VGS= -4.5V, ID= -7A 2
Static Drain-Source on-Resistance RDS(on) 22.7 32 mΩ VGS= -2.5V, ID= -5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -7 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -28 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -7A 2
Input Capacitance Ciss 2000 pF VDS= -10V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 242 pF 2
Reverse Transfer Capacitance Crss 231 pF 2
Total Gate Charge Qg 15.3 nC VDS= -10V, ID= -3A, VGS= -4.5V 2
Gate-Source Charge Qgs 2.2 nC 2
Gate-Drain (Miller) Charge Qgd 4.4 nC 2
Turn-on Delay Time td(on) 10 ns VDD = -10V, ID= -7A, VGS= -4.5V, RGEN=2.5Ω 2
Turn-on Rise Time tr 31 ns 2
Turn-off Delay Time td(off) 28 ns 2
Turn-off Fall Time tf 8 ns 2

CAD (KiCad official)

  • Symbol: JMTJ210P02A
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: jmtj210p02a-etched.step / jmtj210p02a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); jmtj210p02a.step / jmtj210p02a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Jiangsu JieJie Microelectronics datasheet (6 pp, sha256 697c8b14354ca04d, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF